STGYA50M120DF3

Overview

The STGYA50M120DF3 is a trench gate field-stop IGBT from the M series, rated at 1200 V and 50 A in a Max247 long leads package. It features a maximum junction temperature of 175 °C and a short-circuit withstand time of 10 μs. The collector-emitter saturation voltage (VCE(sat)) is typically 1.7 V at IC = 50 A. Key electrical parameters include a continuous collector current of 50 A at TC = 100 °C, a gate threshold voltage of 5 to 7 V, and a total power dissipation of 535 W at TC = 25 °C. Thermal resistance from junction to case is 0.28 °C/W for the IGBT and 0.48 °C/W for the diode.

Feature Summary

• Advanced proprietary trench gate field-stop structure for optimal balance between inverter system performance and efficiency.
• Positive VCE(sat) temperature coefficient and tight parameter distribution ensure safer paralleling operation.
• Soft- and fast-recovery antiparallel diode with low thermal resistance.

Applications

• Industrial drives
• UPS
• Solar inverters
• General purpose inverter

Procurement Notes

Verify the specific ordering code STGYA50M120DF3 against the latest manufacturer datasheet DS13799 Rev 2. Confirm that the Max247 long leads package dimensions and pinout match the design requirements. Ensure environmental compliance standards are met by checking the ECOPACK grade specifications provided by the supplier.

Selection Notes

Select this component for applications requiring high efficiency and robust short-circuit protection up to 10 μs. The positive temperature coefficient of VCE(sat) facilitates safe parallel operation without complex current balancing circuits. Consider the 175 °C maximum junction temperature capability for high-temperature environments and the low thermal resistance for effective heat dissipation in compact designs.

Part Context

This device belongs to the M series IGBTs developed by STMicroelectronics. The series utilizes advanced trench gate field-stop technology to deliver low loss characteristics essential for modern inverter systems. The Max247 long leads package provides mechanical stability and efficient thermal management for through-hole mounting applications.

Replacement Considerations

STG50M120F3D7 is a similar M series IGBT with comparable electrical ratings but uses a D7 chip package rather than the Max247 long leads form factor. Verify pin compatibility and thermal interface requirements when substituting.

FAQ

What is the short-circuit withstand time for the STGYA50M120DF3?

The device has a short-circuit withstand time of 10 μs under conditions where VCC ≤ 600 V, VGE = 15 V, and TJstart ≤ 150 °C.

How does the VCE(sat) behave with temperature changes?

The STGYA50M120DF3 exhibits a positive VCE(sat) temperature coefficient, which increases from a typical 1.7 V at 25 °C to 2.1 V at 175 °C at IC = 50 A.

What is the reverse recovery charge of the antiparallel diode?

At TJ = 25 °C, the reverse recovery charge (Qrr) is typically 2.2 μC. At TJ = 175 °C, it increases to a typical value of 7.65 μC.