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STH320N4F6-2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 40V 200A H2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STH320N4F6-2
- Description：MOSFET N-CH 40V 200A H2PAK
- Series：DeepGATE™, STripFET™ VI
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：240 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13800 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：H2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), Variant
Single FETs, MOSFETs datasheet and documents for STH320N4F6-2
Single FETs, MOSFETs Overview
The STH320N4F6-2 is an N-channel Power MOSFET developed using STripFET™ F6 technology with a new trench gate structure. It features a very low on-resistance and high avalanche ruggedness, making it suitable for automotive applications. The device is AEC-Q101 qualified and housed in an H2PAK-6 package.
Single FETs, MOSFETs Feature Summary
- Developed using STripFET™ F6 technology with a new trench gate structure
- AEC-Q101 qualified for automotive reliability
- Very low on-resistance across all packages
- High avalanche ruggedness
Single FETs, MOSFETs Applications
- Automotive power management systems
Single FETs, MOSFETs Procurement Notes
Verify the current lifecycle status of the STH320N4F6-2 before procurement, as distributor records indicate it may be obsolete or nearing end-of-life. Confirm availability through official STMicroelectronics channels or authorized distributors to ensure supply continuity. Check for potential obsolescence notices (PCN) regarding packaging or assembly site changes prior to finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust automotive-grade N-channel MOSFETs with low conduction losses. The STripFET™ F6 technology ensures efficient performance in medium-voltage applications. Ensure the H2PAK-6 package fits the thermal and spatial constraints of the target PCB layout. Verify that the gate drive requirements align with the device's input capacitance and charge characteristics.
Single FETs, MOSFETs Part Context
This part belongs to the STH320 series from STMicroelectronics, which utilizes DeepGATE™ and STripFET™ VI technologies. These devices are designed for high-efficiency power switching in automotive and industrial environments. The series emphasizes low Rds(on) and high reliability, meeting stringent automotive standards like AEC-Q101.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the STH320 series or other STripFET™ F6 variants with compatible pinouts and electrical ratings. Consider the STH320N4F6-6 if a different package configuration is acceptable. Verify that any replacement maintains the same AEC-Q101 qualification and thermal performance.
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