ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 40A POWERFLAT
- Series：STripFET™ F7
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1594pF @ 25V
- Power - Max：94W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerFlat™ (5x6)
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The STL105DN4LF7AG is an automotive-grade dual N-channel Power MOSFET utilizing STripFET F7 technology. It features a 40 V drain-source voltage rating and a maximum on-resistance of 4.5 mΩ at VGS = 10 V. The device supports a continuous drain current of 40 A and handles pulsed currents up to 160 A. Packaged in a PowerFLAT 5x6 double island format, it offers a thermal resistance junction-to-case of 1.6 °C/W and operates within a junction temperature range of -55 °C to +175 °C. Total gate charge is typically 27.5 nC.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Enhanced trench gate structure for low on-state resistance
- Wettable flank package for improved solder joint inspection
Applications
- Switching applications
Procurement Notes
Verify the specific ordering code against official manufacturer documentation to ensure correct component selection. Confirm that the required package variant matches the intended PCB footprint design. Review the latest datasheet revision history for any updates to electrical characteristics or mechanical dimensions prior to finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high avalanche ruggedness and low internal capacitance to enhance EMI immunity. The dual N-channel configuration allows for efficient power management in compact layouts. Ensure the application environment remains within the specified operating temperature limits to maintain optimal performance and longevity.
Part Context
This part belongs to the STL105DN4LF7AG series from STMicroelectronics. It is manufactured using silicon technology and falls under the MOSFET product category. The device is designed for surface mount installation and is available in tape and reel packaging formats suitable for automated assembly processes.
Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-reference key parameters such as RDS(on), ID ratings, and package dimensions when evaluating potential replacement components to ensure functional compatibility.
