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The STL13DP10F6 is a dual N-channel enhancement mode MOSFET from the STripFET F6 series, manufactured by STMicroelectronics. It utilizes PowerFLAT 5x6-8 surface-mount packaging with eight pins. Key electrical parameters include a drain-source voltage (Vds) of 100 V and a maximum continuous drain current (Id) of 13 A per channel at 25°C. The typical on-resistance (Rds(on)) is 7.3 mΩ at Vgs = 10 V. The device features a gate threshold voltage range of 2 V to 4 V and a maximum gate-source voltage of ±20 V. Thermal performance includes a maximum power dissipation of 5 W and an operating temperature range from -55 °C to +175 °C. Physical dimensions are 6.35 mm in width, 5.4 mm in length, and 0.95 mm in height.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and tape-and-reel specifications. Ensure the component matches the required automotive or industrial grade if applicable. Cross-reference the part number with authorized distributors to confirm active status and availability before finalizing procurement plans.
Select this component when a dual N-channel solution is required within a compact PowerFLAT form factor. The 100 V rating and 13 A current capacity suit medium-power applications. Evaluate the 7.3 mΩ on-resistance against system conduction loss requirements. Confirm that the 5 W power dissipation rating aligns with the thermal management capabilities of the target PCB layout.
This part belongs to the STripFET F6 family, which employs advanced trench gate technology to minimize Rds(on) while maintaining low gate charge. The PowerFLAT 5x6-8 package is designed for high-power density applications, offering superior thermal performance compared to traditional SO-8 packages. This series targets efficient power conversion in consumer and industrial electronics.
The STL13DP10F6 is housed in a PowerFLAT 5x6-8 surface-mount package.
It is a dual N-channel MOSFET containing two independent channels in one package.
The maximum operating junction temperature is +175 °C.