STL13DP10F6

STL13DP10F6

$0.48
  • Description:MOSFET 2P-CH 100V 13A POWERFLAT
  • Series:DeepGATE™, STripFET™ VI

SKU:5d10a9ff7998 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 100V 13A POWERFLAT
  • Series:DeepGATE™, STripFET™ VI
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:13A
  • Rds On (Max) @ Id, Vgs:180mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:864pF @ 25V
  • Power - Max:62.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerFlat™ (5x6)
  • Grade:-
  • Qualification:-

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STL13DP10F6

Overview

The STL13DP10F6 is a dual N-channel enhancement mode MOSFET from the STripFET F6 series, manufactured by STMicroelectronics. It utilizes PowerFLAT 5x6-8 surface-mount packaging with eight pins. Key electrical parameters include a drain-source voltage (Vds) of 100 V and a maximum continuous drain current (Id) of 13 A per channel at 25°C. The typical on-resistance (Rds(on)) is 7.3 mΩ at Vgs = 10 V. The device features a gate threshold voltage range of 2 V to 4 V and a maximum gate-source voltage of ±20 V. Thermal performance includes a maximum power dissipation of 5 W and an operating temperature range from -55 °C to +175 °C. Physical dimensions are 6.35 mm in width, 5.4 mm in length, and 0.95 mm in height.

Feature Summary

  • Dual N-channel configuration for space-efficient circuit designs
  • STripFET F6 technology optimized for low on-resistance and fast switching
  • PowerFLAT package provides high thermal efficiency and compact footprint

Applications

  • DC-DC converters
  • Motor control circuits
  • Load switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and tape-and-reel specifications. Ensure the component matches the required automotive or industrial grade if applicable. Cross-reference the part number with authorized distributors to confirm active status and availability before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel solution is required within a compact PowerFLAT form factor. The 100 V rating and 13 A current capacity suit medium-power applications. Evaluate the 7.3 mΩ on-resistance against system conduction loss requirements. Confirm that the 5 W power dissipation rating aligns with the thermal management capabilities of the target PCB layout.

Part Context

This part belongs to the STripFET F6 family, which employs advanced trench gate technology to minimize Rds(on) while maintaining low gate charge. The PowerFLAT 5x6-8 package is designed for high-power density applications, offering superior thermal performance compared to traditional SO-8 packages. This series targets efficient power conversion in consumer and industrial electronics.

FAQ

What is the package type for the STL13DP10F6?

The STL13DP10F6 is housed in a PowerFLAT 5x6-8 surface-mount package.

Is the STL13DP10F6 a single or dual channel device?

It is a dual N-channel MOSFET containing two independent channels in one package.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175 °C.

STL13DP10F6STL13DP10F6
$0.48
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