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STL15N65M5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 10A POWERFLAT. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STL15N65M5
- Description：MOSFET N-CH 650V 10A POWERFLAT
- Series：MDmesh™ V
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：375mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：816 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerFlat™ (5x6)
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for STL15N65M5
Single FETs, MOSFETs Overview
The STL15N65M5 is an N-channel Power MOSFET from the MDmesh M5 series, housed in a PowerFLAT 5x6 HV surface-mount package. It features a maximum drain-source voltage of 650 V and a continuous drain current of 10 A at 25 °C case temperature. The device exhibits a typical on-resistance of 0.335 Ω and a maximum of 0.375 Ω at VGS = 10 V and ID = 5 A. Key electrical parameters include a total gate charge of 22 nC, input capacitance of 816 pF, and a peak diode recovery voltage slope of 15 V/ns. Thermal resistance from junction to case is 2.4 °C/W.
Single FETs, MOSFETs Feature Summary
- Extremely low on-resistance achieved through innovative vertical process technology combined with horizontal layout
- Low gate charge and input capacitance for reduced switching losses
- Excellent switching performance suitable for high-efficiency applications
- 100% avalanche tested for enhanced reliability
Single FETs, MOSFETs Applications
- Switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific order code against official STMicroelectronics documentation to ensure correct part identification. Confirm that the PowerFLAT 5x6 HV package matches the required footprint and thermal management strategy. Check for any recent datasheet revisions or environmental compliance updates prior to finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high-voltage handling with efficient power conversion. The low RDS(on) and optimized gate charge characteristics support superior efficiency in hard-switching topologies. Ensure the PCB layout accommodates the specific thermal requirements associated with the PowerFLAT 5x6 HV package dimensions.
Single FETs, MOSFETs Part Context
This device belongs to the MDmesh M5 series of super-junction high-voltage MOSFETs. The series utilizes proprietary vertical process technology integrated with the PowerMESH horizontal layout structure. This combination allows for extremely low on-resistance relative to the die area, optimizing performance for high-power applications compared to previous generation technologies.
Single FETs, MOSFETs Replacement Considerations
Consult official STMicroelectronics documentation for confirmed substitute part numbers within the MDmesh M5 family or other compatible series. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components.
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