STL260N4F7

$2.65

Description：MOSFET N-CH 40V 120A POWERFLAT
Series：STripFET™ F7
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e7b1792d47cf Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STL260N4F7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 40V 120A POWERFLAT. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STL260N4F7

Description：MOSFET N-CH 40V 120A POWERFLAT
Series：STripFET™ F7
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.1mOhm @ 24A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：188W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerFlat™ (5x6)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for STL260N4F7

STL260N4F7

Single FETs, MOSFETs Overview

The STL260N4F7 is an N-channel Power MOSFET utilizing STripFET F7 technology with an enhanced trench gate structure. It features a 40 V drain-source voltage rating and a maximum on-state resistance of 1.1 mΩ, with a typical value of 0.9 mΩ at VGS = 10 V and ID = 24 A. The device supports a continuous drain current of 120 A at TC = 25 °C and a pulsed current of 480 A. Packaged in a PowerFLAT 5x6 type C format, it offers a thermal resistance junction-to-case of 0.8 °C/W and total power dissipation up to 188 W at 25 °C case temperature.

Single FETs, MOSFETs Feature Summary

Utilizes STripFET F7 technology for very low on-state resistance and reduced internal capacitance.
Provides excellent figure of merit (FoM) for efficient switching performance.
Features a low Crss/Ciss ratio designed to enhance electromagnetic interference immunity.
Demonstrates high avalanche ruggedness for robust operation under transient conditions.

Single FETs, MOSFETs Applications

Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision, currently Rev 5 dated April 2019, against your design requirements. Confirm that the PowerFLAT 5x6 footprint matches your PCB layout guidelines precisely. Ensure thermal management strategies account for the specified junction-to-case and junction-to-PCB thermal resistances under your actual operating conditions. Check for any recent product change notifications regarding manufacturing facilities or materials.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses and fast switching speeds within a 40 V system. The PowerFLAT 5x6 package is suitable for applications demanding high current density in a compact form factor. Consider the thermal environment carefully, as performance depends significantly on case or PCB mounting temperatures. Evaluate the gate charge characteristics to ensure compatibility with your driver capabilities.

Single FETs, MOSFETs Part Context

This device belongs to the STripFET F7 family of power MOSFETs from STMicroelectronics. These components are engineered to minimize on-resistance while optimizing switching dynamics through advanced trench gate structures. The PowerFLAT 5x6 package provides a surface-mount solution optimized for thermal performance and space-constrained designs compared to traditional leaded packages.

Single FETs, MOSFETs Replacement Considerations

Consult official ST documentation for qualified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Verify electrical parameters such as RDS(on) and gate charge to ensure functional equivalence in your specific application circuit.