STL36DN6F7

STL36DN6F7

$0.52
  • Description:MOSFET 2N-CH 60V 33A POWERFLAT
  • Series:STripFET™

SKU:2849f4dace36 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 33A POWERFLAT
  • Series:STripFET™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:33A (Tc)
  • Rds On (Max) @ Id, Vgs:27mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:420pF @ 30V
  • Power - Max:58W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerFlat™ (5x6)
  • Grade:-
  • Qualification:-

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STL36DN6F7

Overview

The STL36DN6F7 is an N-channel enhancement mode Power MOSFET from STMicroelectronics, belonging to the STripFET F7 series. It features a 60 V drain-source voltage (Vdss) rating and supports a maximum continuous drain current (Id) of 36 A. The device utilizes an enhanced trench gate structure to achieve a typical on-state resistance (Rds(on)) of 12 mΩ at Vgs = 10 V. Packaged in a compact PowerFLAT 5x6 surface-mount format with eight pins, it operates within a temperature range of -55°C to +175°C. Key electrical parameters include a total gate charge (Qg) of approximately 14 nC at Vgs = 10 V and a maximum power dissipation (Pd) of 58 W.

Feature Summary

  • Utilizes STripFET F7 technology with an enhanced trench gate structure for low on-resistance and fast switching efficiency.
  • Offers excellent figure of merit (FoM) and low Crss/Ciss ratio to enhance electromagnetic interference immunity.
  • Features high avalanche ruggedness for robust performance in demanding power applications.

Applications

  • Industrial motor control systems
  • DC-DC converter circuits
  • Low-voltage power management solutions

Procurement Notes

Verify the specific ordering suffix and package variant when sourcing, as availability may vary by region. Confirm that the component meets RoHS compliance standards required for your manufacturing process. Check for any recent product change notifications regarding manufacturing site transfers or material updates before finalizing procurement plans.

Selection Notes

Select this component for designs requiring a balance of low conduction losses and high current density in a small footprint. Ensure the thermal design accounts for the 58 W power dissipation limit under expected operating conditions. Compare the 12 mΩ Rds(on) against alternative packages to verify suitability for space-constrained PCB layouts.

Part Context

This part belongs to the STripFET F7 family, which focuses on optimizing the trade-off between on-resistance and gate charge. It complements other devices in the series like the STL50N6F7 and STL64DN4F7AG, offering a mid-range current capability suitable for compact industrial and consumer power applications.

Replacement Considerations

Direct pin-compatible alternatives within the same PowerFLAT 5x6 package include the STL50N6F7 (higher current) or STL64DN4F7AG (automotive qualified). Verify that the replacement's Rds(on) and avalanche energy ratings meet or exceed the original design requirements.

STL36DN6F7STL36DN6F7
$0.52
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