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The STL36DN6F7 is an N-channel enhancement mode Power MOSFET from STMicroelectronics, belonging to the STripFET F7 series. It features a 60 V drain-source voltage (Vdss) rating and supports a maximum continuous drain current (Id) of 36 A. The device utilizes an enhanced trench gate structure to achieve a typical on-state resistance (Rds(on)) of 12 mΩ at Vgs = 10 V. Packaged in a compact PowerFLAT 5x6 surface-mount format with eight pins, it operates within a temperature range of -55°C to +175°C. Key electrical parameters include a total gate charge (Qg) of approximately 14 nC at Vgs = 10 V and a maximum power dissipation (Pd) of 58 W.
Verify the specific ordering suffix and package variant when sourcing, as availability may vary by region. Confirm that the component meets RoHS compliance standards required for your manufacturing process. Check for any recent product change notifications regarding manufacturing site transfers or material updates before finalizing procurement plans.
Select this component for designs requiring a balance of low conduction losses and high current density in a small footprint. Ensure the thermal design accounts for the 58 W power dissipation limit under expected operating conditions. Compare the 12 mΩ Rds(on) against alternative packages to verify suitability for space-constrained PCB layouts.
This part belongs to the STripFET F7 family, which focuses on optimizing the trade-off between on-resistance and gate charge. It complements other devices in the series like the STL50N6F7 and STL64DN4F7AG, offering a mid-range current capability suitable for compact industrial and consumer power applications.
Direct pin-compatible alternatives within the same PowerFLAT 5x6 package include the STL50N6F7 (higher current) or STL64DN4F7AG (automotive qualified). Verify that the replacement's Rds(on) and avalanche energy ratings meet or exceed the original design requirements.