STL40DN3LLH5

Overview

The STL40DN3LLH5 is an automotive-grade dual N-channel Power MOSFET utilizing STripFET H5 technology. It features a 30 V drain-source voltage rating and a typical on-resistance of 16 mΩ, with a maximum of 18 mΩ at VGS = 10 V. The device supports a continuous drain current of 40 A per channel at TC = 25 °C. Packaged in a PowerFLAT 5x6 double island wettable flank configuration, it offers high avalanche ruggedness and low gate drive power loss. Key electrical parameters include a total gate charge of 4.5 nC and a junction-to-case thermal resistance of 3.0 °C/W.

Feature Summary

• AEC-Q101 qualified for automotive reliability
• Optimized STripFET H5 technology for industry-leading figure of merit
• Wettable flank package design to enhance solder joint inspection and reliability
• Logic level gate threshold enabling efficient drive from standard logic interfaces

Applications

• Automotive switching applications
• High-efficiency DC-DC converters
• Motor control circuits

Procurement Notes

Verify the specific ordering code STL40DN3LLH5 against the manufacturer's official datasheet DS7090 Rev 8 to confirm current product status and availability. Ensure that the PowerFLAT 5x6 double island WF package dimensions match the target PCB footprint requirements. Confirm environmental compliance specifications such as ECOPACK grades directly with the supplier or manufacturer documentation prior to finalizing procurement orders.

Selection Notes

Select this component when designing automotive systems requiring dual N-channel isolation within a compact surface-mount footprint. The 30 V rating suits low-voltage bus architectures. Evaluate the 16 mΩ typical RDS(on) against thermal constraints to ensure adequate heat dissipation without excessive heatsinking. Consider the 175 °C maximum junction temperature capability for robust operation in high-ambient environments.

Part Context

This device belongs to the STL40 series of STripFET H5 Power MOSFETs. It shares the same package outline and general feature set as other variants in the family but is distinguished by its specific 30 V breakdown voltage and 40 A current handling capabilities. The marking code '40DN3LH5' identifies this specific part number on the component body.

Replacement Considerations

Direct replacements must maintain the 30 V VDS rating, dual N-channel configuration, and PowerFLAT 5x6 double island package. Verify that any substitute device meets or exceeds the 18 mΩ maximum RDS(on) specification and retains AEC-Q101 qualification if required for the specific automotive application context.

FAQ

What is the maximum pulsed drain current for each channel?

The maximum pulsed drain current (IDM) is 44 A for one channel active and 160 A for both channels active, limited by the safe operating area.

Does the device support logic-level gate driving?

Yes, the device is designed with a logic-level gate threshold, allowing it to be driven effectively by standard logic voltages such as 4.5 V or 10 V.

What is the reverse recovery time of the internal source-drain diode?

The typical reverse recovery time (trr) is 16.2 ns when tested at ID = 11 A, di/dt = 100 A/µs, VDD = 25 V, and TJ = 150 °C.