STL4P2UH7

Single FETs, MOSFETs Overview

The STL4P2UH7 is a P-channel MOSFET from STMicroelectronics designed for efficient power switching applications. It features low on-state resistance and capacitance to enhance conduction and switching performance. Key electrical parameters include a maximum drain-source on-resistance (Rds(on)) of 100mΩ at Vgs = 4.5V and Id = 2A, with a gate charge (Qg) of 4.8 nC @ 4.5V. The device supports a maximum drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -2A. Input capacitance (Ciss) is 510 pF @ 10V, and the maximum power dissipation is 2.4W at case temperature.

Single FETs, MOSFETs Feature Summary

• Exhibits low on-state resistance for improved conduction efficiency
• Features low capacitance for enhanced switching performance
• Designed as a P-channel MOSFET for power management

Single FETs, MOSFETs Applications

• Power switching circuits
• Battery protection systems
• Load switches in portable electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific package type and tape/reel configuration against the official STMicroelectronics datasheet before ordering. Ensure that the sourcing channel provides genuine components with traceable origin. Cross-reference the part number suffixes to confirm exact electrical tolerances and marking codes match your design requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with low Rds(on) and fast switching characteristics is required. Consider the 2A current rating and 20V voltage limit for compatibility with system power rails. Evaluate thermal management needs given the 2.4W power dissipation rating to ensure reliable operation under load conditions.

Single FETs, MOSFETs Part Context

This discrete semiconductor belongs to the MOSFET category within STMicroelectronics' portfolio. It serves as a single FET solution for power control tasks. The device complements other power management components by offering efficient switching capabilities in a compact form factor suitable for modern electronic designs.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists or cross-reference tools for compatible P-channel MOSFETs with similar Rds(on), Vds, and Id ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.