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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 18A POWERFLAT
- Series：STripFET™ F7
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Rds On (Max) @ Id, Vgs：16mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 25V
- Power - Max：65W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerFlat™ (5x6)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STL52DN4LF7AG is an automotive-grade dual N-channel Power MOSFET utilizing STripFET F7 technology. It features a 40 V drain-source voltage rating and a typical on-state resistance of 9 mΩ, with a maximum of 16 mΩ at VGS = 10 V. The device supports a continuous drain current of 18 A at 25 °C and handles pulsed currents up to 72 A. Packaged in a PowerFLAT 5x6 double island format, it offers low internal capacitance and gate charge for efficient switching. Key electrical parameters include a total gate charge of 9.4 nC and a thermal resistance junction-to-case of 2.3 °C/W.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Wettable flank package design for enhanced solder joint inspection
- Low Crss/Ciss ratio providing improved electromagnetic interference immunity
- High avalanche ruggedness capability
Applications
- General switching applications
Procurement Notes
Verify the specific revision status against the latest official documentation before finalizing procurement plans. Confirm that the PowerFLAT 5x6 double island package orientation matches the intended PCB footprint requirements. Ensure that thermal management strategies align with the specified junction-to-case thermal resistance values under actual operating conditions.
Selection Notes
Select this component when automotive qualification and high efficiency are required within a 40 V system. The low on-resistance and optimized gate charge make it suitable for high-frequency switching environments where EMI performance is critical. Evaluate the power dissipation limits relative to the available cooling surface area on the printed circuit board.
Part Context
This part belongs to the STripFET F7 family of power transistors designed for advanced switching performance. The series emphasizes reduced conduction losses and faster switching speeds through enhanced trench gate structures. It represents a specialized segment of STMicroelectronics' portfolio focused on meeting stringent automotive industry standards.
Replacement Considerations
Consult official substitution lists for compatible alternatives. Verify pinout compatibility and electrical parameter margins before implementing any cross-reference components in existing designs.
