STL52N25M5

$1.37

Description：MOSFET N-CH 250V 28A POWERFLAT
Series：MDmesh™ V
Mfr：STMicroelectronics
Package：Tape & Reel (TR)

SKU:2e54cc9bf6a5 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STL52N25M5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 250V 28A POWERFLAT. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STL52N25M5

Description：MOSFET N-CH 250V 28A POWERFLAT
Series：MDmesh™ V
Mfr：STMicroelectronics
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：65mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1770 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 110W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerFlat™ (5x6)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for STL52N25M5

STL52N25M5

Single FETs, MOSFETs Overview

The STL52N25M5 is an N-channel Power MOSFET utilizing MDmesh V technology and a PowerFLAT (5x6) package. It features a drain-source breakdown voltage of 250 V, a continuous drain current of 28 A at 25 °C case temperature, and a maximum on-resistance of 0.076 Ω. The device supports a peak diode recovery voltage slope of 15 V/ns and includes 100% avalanche testing.

Single FETs, MOSFETs Feature Summary

MDmesh V vertical process combined with PowerMESH horizontal layout for low on-resistance
High dv/dt capability for robust switching performance
Low profile PowerFLAT package design

Single FETs, MOSFETs Applications

Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation to ensure accuracy of electrical parameters. Confirm that the PowerFLAT (5x6) package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high power density and superior efficiency are required in silicon-based designs. The MDmesh V technology provides unmatched on-resistance characteristics compared to standard alternatives. Consider the 250 V rating and 28 A current capacity for appropriate load matching in power conversion circuits.

Single FETs, MOSFETs Part Context

This device belongs to STMicroelectronics' MDmesh V Power MOSFET portfolio. It integrates proprietary vertical process technology with the established PowerMESH horizontal layout structure. This combination results in extremely low on-resistance suitable for applications demanding outstanding efficiency and high power density.