STL60N32N3LL

STL60N32N3LL

$0.65
  • Description:MOSFET 2N-CH 30V 32A POWERFLAT
  • Series:STripFET™

SKU:c76091c9c9bc Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 32A POWERFLAT
  • Series:STripFET™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:32A, 60A
  • Rds On (Max) @ Id, Vgs:9.2mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id:1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs:6.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:950pF @ 25V
  • Power - Max:23W, 50W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerFlat™ (5x6)
  • Grade:-
  • Qualification:-

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STL60N32N3LL

Overview

The STL60N32N3LL is a dual N-channel Power MOSFET utilizing STripFET™ V and DeepGATE™ technology in a PowerFLAT™ 5x6 package. It features an asymmetrical double island structure with two independent channels, Q1 and Q2. Q1 offers a maximum RDS(on) of 9.2 mΩ at 10V gate drive and a continuous drain current of 13.6A at Tpcb=25°C. Q2 provides a lower maximum RDS(on) of 5.5 mΩ at 10V and supports up to 15A continuous drain current under the same conditions. Both channels have a 30V drain-source voltage rating and operate within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Asymmetrical double island architecture for optimized thermal distribution
  • Industry benchmark on-resistance multiplied by gate charge (RDS(on)*Qg)
  • High avalanche ruggedness capability
  • Low gate drive power losses

Applications

  • DC-DC converter applications requiring high power density
  • Switching applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status, as document updates may alter electrical characteristics or mechanical dimensions. Ensure storage and handling procedures comply with moisture sensitivity levels specified in the official documentation to prevent package damage prior to soldering.

Selection Notes

Select this component when designing circuits that require two independent low-voltage switching paths within a compact footprint. The distinct electrical parameters between Q1 and Q2 allow for differentiated current handling capabilities in parallel or isolated configurations. Evaluate thermal resistance values against the specific PCB copper area and ambient cooling conditions to ensure junction temperatures remain within safe operating limits during peak load operations.

Part Context

This device belongs to STMicroelectronics' PowerFLAT™ series, designed for chip-scale packaging solutions. It integrates proprietary STripFET™ V and DeepGATE™ technologies to minimize conduction and switching losses. The PowerFLAT™ 5x6 form factor enables high-density mounting on printed circuit boards, making it suitable for modern electronic systems where space constraints are critical.

Replacement Considerations

Direct pin-to-pin replacements within the same family include the STL86N32N3LL. Verify that alternative part numbers maintain compatibility with the required voltage ratings, current capacities, and thermal performance metrics before implementation.

STL60N32N3LLSTL60N32N3LL
$0.65
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