STL64DN4F7AG

$0.55

Description：MOSFET 2N-CH 40V 40A POWERFLAT
Series：STripFET™ F7

SKU:e119f7313873 Category: FET, MOSFET Arrays Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 40A POWERFLAT
Series：STripFET™ F7
Mfr：STMicroelectronics
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：637pF @ 25V
Power - Max：57W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerFlat™ (5x6)
Grade：Automotive
Qualification：AEC-Q101

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STL64DN4F7AG

Overview

The STL64DN4F7AG is an automotive-grade dual N-channel Power MOSFET utilizing STripFET F7 technology. It features a PowerFLAT 5x6 double island package with wettable flanks. Key electrical ratings include a drain-source voltage of 40 V, a continuous drain current of 40 A at TC = 25 °C, and a maximum static drain-source on-resistance of 8.5 mΩ at VGS = 10 V and ID = 20 A. The device operates within a junction temperature range of -55 to 175 °C and has a total dissipation of 57 W at TC = 25 °C.

Feature Summary

AEC-Q101 qualified for automotive reliability
Among the lowest RDS(on) values available in its class
Low Crss/Ciss ratio designed for improved EMI immunity
High avalanche ruggedness capability

Applications

General switching applications

Procurement Notes

Verify the specific datasheet revision (e.g., DS12592 Rev 3) against the manufacturer's official website before finalizing designs. Confirm that the PowerFLAT 5x6 double island footprint matches the recommended layout dimensions provided in the package information section. Ensure compliance with the absolute maximum ratings regarding thermal resistance and pulsed current limits during system validation.

Selection Notes

Select this component when low conduction losses and high efficiency are required in compact automotive or industrial layouts. The dual configuration allows for bridge or half-bridge topologies within a single small footprint. Consider the 8.5 mΩ maximum RDS(on) for thermal management calculations under continuous load conditions at elevated temperatures.

Part Context

This part belongs to the STripFET F7 series of low-voltage power MOSFETs from STMicroelectronics. The series utilizes enhanced trench gate structures to minimize on-state resistance while reducing internal capacitance and gate charge. This technology enables faster switching speeds and higher overall energy efficiency compared to previous generations.