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The STL7DN6LF3 is an automotive-grade N-channel Power MOSFET developed using STripFET F3 technology. It features a dual low RDS(ON) configuration in a compact PowerFLAT 5x6 package, designed to minimize on-resistance and gate charge for superior switching performance. The device is rated for 60 V breakdown voltage with a typical on-resistance of 35 mOhm and supports up to 6 A current. Key electrical characteristics include a logic-level VGS(th), a maximum junction temperature of 175 °C, and 100% avalanche rating. It is AEC-Q101 qualified and utilizes a wettable flank package for enhanced soldering reliability.
Verify the specific ordering suffix to confirm the exact tape-and-reel quantity and packaging variant. Confirm that the component meets the required AEC-Q101 standards for your target application. Check the latest datasheet revision to ensure compatibility with your design specifications regarding thermal and electrical limits.
Select this component when a compact, high-efficiency dual N-channel solution is required for automotive or industrial applications. The 60 V rating and 35 mOhm typical resistance make it suitable for low-voltage, high-current switching tasks. Ensure the PCB layout accommodates the PowerFLAT 5x6 footprint and leverages the wettable flank feature for optimal assembly quality.
This part belongs to STMicroelectronics' medium-voltage N-channel MOSFET portfolio, specifically utilizing the STripFET F3 technology line. It is distinct from single-channel variants by offering two independent channels in one package, which aids in reducing overall solution footprint while maintaining robust switching performance for power management circuits.
Direct substitutes must match the 60 V, dual N-channel specification and PowerFLAT 5x6 package. Verify that any alternative component maintains comparable RDS(ON) values and AEC-Q101 qualification if automotive use is intended. Cross-reference pinouts and thermal characteristics to ensure seamless integration without redesign.