ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
STO36N60M6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 30A TOLL. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STO36N60M6
- Description：MOSFET N-CH 600V 30A TOLL
- Series：MDmesh™ M6
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：99mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44.3 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1960 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：230W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TOLL (HV)
- Package / Case：8-PowerSFN
Single FETs, MOSFETs datasheet and documents for STO36N60M6
Single FETs, MOSFETs Overview
The STO36N60M6 is an N-channel Power MOSFET from STMicroelectronics, utilizing MDmesh M6 superjunction technology. It features a 600 V drain-source voltage rating and a continuous drain current of 25 A at case temperature. The device offers a typical on-resistance of 125 mΩ at 10 V gate drive. Packaged in a surface-mount TO-LL (TOLL) format, it supports a power dissipation of 230 W. Operating temperatures range from -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- MDmesh M6 superjunction technology for optimized RDS(on) per area and switching performance
- Zener protection integrated within the gate structure
- 100% avalanche tested for robustness under inductive load conditions
- Low gate input resistance suitable for efficient driving
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Industrial motor control systems
- Uninterruptible power supplies (UPS)
- High-frequency power factor correction circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and tape/reel specifications. Ensure thermal management designs account for the TOLL package's heat dissipation capabilities. Confirm RoHS compliance status with the manufacturer before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage isolation with low conduction losses. The TO-LL package facilitates automated surface-mount assembly while maintaining high power density. Compare total gate charge and switching times against system requirements to ensure compatibility with available driver circuits.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M6 family, representing an advancement over previous generations with improved switching behavior and reduced on-resistance. It serves as a surface-mount alternative to through-hole variants like the STP series, offering similar electrical characteristics in a compact footprint designed for modern PCB layouts.
Single FETs, MOSFETs Replacement Considerations
Direct replacements include other MDmesh M6 devices in the same voltage class such as STO33N60M6 or STO45N60M6, provided pinout and thermal parameters match. Verify that substitute parts maintain the required 600V rating and compatible gate threshold voltages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
