STP11N60DM2

Single FETs, MOSFETs Overview

The STP11N60DM2 is an N-channel enhancement mode Power MOSFET from the MDmesh DM2 series, designed for high-voltage applications. It features a maximum drain-source voltage of 650 V and a continuous drain current of 10 A. The device is housed in a TO-220 surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 420 mΩ, a typical forward voltage of 1.6 V, and a maximum power dissipation of 110 W. It operates within a temperature range of -55°C to 150°C, with a typical gate charge of 16.5 nC at the specified gate-source voltage.

Single FETs, MOSFETs Feature Summary

• Fast-recovery body diode with low recovery charge and time
• Extremely low gate charge and input capacitance
• Low on-resistance for high efficiency
• 100% avalanche tested for ruggedness

Single FETs, MOSFETs Applications

• High-efficiency converters
• Bridge topologies
• ZVS phase-shift converters

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant against official documentation, as the model may correspond to different physical packages such as TO-220 or TO-220FP depending on the suffix. Confirm the component status, as some listings indicate non-recommended-new-designation status. Ensure compatibility with thermal management requirements given the 110 W power dissipation rating. Cross-reference the exact part number with the manufacturer's current portfolio to avoid obsolete stock.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high dv/dt ruggedness and Zener protection. The MDmesh DM2 technology provides superior avalanche characteristics compared to standard MOSFETs. Consider the low gate charge for driving efficiency in high-frequency switching applications. Evaluate the thermal performance within the specified operating temperature range to ensure reliability in demanding converter environments.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' MDmesh DM2 series, which integrates fast-recovery diode technology with power MOSFETs. The series is engineered for high-efficiency power conversion, offering a combination of low on-resistance and fast diode recovery. It targets applications where switching losses and reverse recovery effects are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same MDmesh DM2 family, such as STF11N60DM2 or STD11N60DM2, verifying package and electrical parameter equivalence. Ensure any substitute maintains the 650 V rating and 10 A current capacity.