STP140NF75

Single FETs, MOSFETs Overview

The STP140NF75 is an N-channel enhancement mode Power MOSFET from the STripFET II series, manufactured by STMicroelectronics. It utilizes a strip-based process to achieve high packing density and low on-resistance. Key electrical parameters include a drain-source voltage (Vds) of 75 V, a continuous drain current (Id) of 120 A at case temperature, and a maximum drain-source resistance (Rds(on)) of 8 mΩ. The device operates within a temperature range of -55°C to 175°C, with a maximum power dissipation of 310 W. Typical gate charge is 160 nC at 10 V, and the maximum gate-source voltage is ±20 V.

Single FETs, MOSFETs Feature Summary

• Utilizes unique Single Feature Size™ strip-based process for high packing density
• Features rugged avalanche characteristics with 100% avalanche testing
• Ensures remarkable manufacturing reproducibility through less critical alignment steps

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Power supply designs requiring medium-voltage switching
• Automotive applications compatible with general-purpose MOSFETs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant when sourcing, as ST offers surface-mount equivalents like the STB140NF75T4 in D2PAK packages. Confirm that the procurement matches the through-hole TO-220 form factor required for your thermal management strategy. Ensure the component status is listed as Active or Production Data to guarantee long-term availability and consistency with the datasheet specifications provided.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding high current handling at 75 V breakdown with low conduction losses. The TO-220 package facilitates direct heatsinking for high-power dissipation scenarios up to 310 W. Consider the 160 nC gate charge for driver capability requirements. Compare against the STB140NF75T4 if surface-mount assembly is preferred, noting the identical electrical performance but different thermal interface characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET II family of N-channel Power MOSFETs designed for industrial and automotive markets. It represents a development in strip-based technology aimed at reducing on-resistance while maintaining ruggedness. The product line spans various voltages from 30 V to 350 V, positioning this 75 V device within the medium-voltage portfolio for efficient power switching solutions.

Single FETs, MOSFETs Replacement Considerations

The STB140NF75T4 is a verified surface-mount equivalent in the D2PAK package offering identical electrical specifications. Designers must account for package differences and thermal path variations when substituting between through-hole and SMD variants.