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STP15N60M2-EP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 11A TO220. Review the specifications below when checking this part for your BOM.
The STP15N60M2-EP is an N-channel Power MOSFET utilizing MDmesh M2 EP technology in a TO-220 package. It features a drain-source voltage of 650 V, maximum on-resistance of 0.378 Ω at 10 V gate drive, and continuous drain current of 11 A at 25 °C case temperature. The device exhibits extremely low gate charge (17 nC typical) and optimized switching characteristics with very low turn-off losses. It includes internal Zener protection and has undergone 100% avalanche testing.
Verify the specific ordering code against the manufacturer's official documentation to ensure correct technical specifications. Confirm that the component meets all required environmental standards and packaging formats before finalizing procurement decisions.
Select this component for designs requiring robust performance in high-frequency environments. Consider its thermal resistance values and safe operating area when designing heat dissipation solutions for continuous or pulsed operation scenarios.
This part belongs to the MDmesh M2 EP enhanced performance family from STMicroelectronics. It is designed for demanding power conversion applications where low switching losses and high reliability are critical requirements.
Consult official substitution lists for verified alternatives. Ensure any replacement matches the electrical ratings and physical package dimensions.
Yes, the device has been subjected to 100% avalanche testing.
The absolute maximum gate-source voltage rating is ±25 V.
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