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STP23NM60N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 19A TO220AB. Review the specifications below when checking this part for your BOM.
STP23NM60N is an N-channel enhancement mode Power MOSFET from STMicroelectronics, utilizing MDmesh II technology. It features a 600V drain-source voltage rating and a continuous drain current of 19.5A. The device offers a typical on-resistance of 0.15 ohms at 10V gate drive. Packaged in a TO-220 through-hole configuration, it supports a maximum power dissipation of 150W and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'ND' if required by your design, as datasheets may list variations. Confirm RoHS compliance status with the manufacturer before finalizing orders. Check for end-of-life notices or obsolescence warnings, as availability may be limited. Ensure thermal management solutions match the 150W dissipation rating under your specific operating conditions.
Select this component when a 600V rating is necessary alongside moderate current handling up to 19.5A. The TO-220 package is suitable for through-hole mounting where space allows. Compare gate charge values against other MDmesh variants to optimize driver requirements. Ensure the application voltage does not exceed the 600V breakdown limit during transient events.
This part belongs to the MDmesh family of power MOSFETs designed for high-voltage applications. It represents a second-generation technology iteration aimed at reducing switching losses. The TO-220 form factor is standard for general-purpose power electronics requiring reliable thermal performance.
Direct substitutes include STF23NM60ND and STP24NM60N. Verify pinout compatibility and thermal resistance specifications before swapping. Ensure the replacement device meets or exceeds the original 600V and 19.5A ratings.
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