Single FETs, MOSFETs STP25NM50N product image

STP25NM50N

$2.96
  • Description:MOSFET N-CH 500V 22A TO220AB
  • Series:MDmesh™
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:4e940e9a49f7 Category: Brand:

  
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STP25NM50N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 500V 22A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP25NM50N

  • Description:MOSFET N-CH 500V 22A TO220AB
  • Series:MDmesh™
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:140mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:2565 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):160W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for STP25NM50N

STP25NM50N

Single FETs, MOSFETs Overview

The STP25NM50N is an N-channel enhancement mode power MOSFET manufactured by STMicroelectronics, belonging to the MDmesh II series. It features a 500V drain-source voltage rating and a continuous drain current of 25A at case temperature. The device utilizes through-hole TO-220 packaging for robust thermal management. Key electrical characteristics include a maximum on-resistance of 160mΩ at 10V gate drive and a typical gate charge of 48nC. It supports junction temperatures up to 150°C and operates with a maximum gate-source voltage of ±20V.

Single FETs, MOSFETs Feature Summary

  • MDmesh II technology provides optimized trade-off between conduction losses and switching performance.
  • High avalanche energy capability ensures ruggedness in inductive load switching applications.
  • Low gate charge facilitates efficient driving and reduces control circuit power consumption.

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor control circuits
  • Power factor correction stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct package variant and tape-and-reel specifications. Confirm RoHS compliance status and check for any recent lifecycle notifications or obsolescence warnings directly from STMicroelectronics before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V blocking voltage and approximately 25A continuous current handling are required in a standard through-hole form factor. Ensure the application's thermal design can dissipate the specified power loss within the TO-220 package constraints. Verify that the gate drive voltage aligns with the 10V specification for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the STPxxNM50N family of high-voltage N-channel MOSFETs. These devices are designed for general-purpose power switching applications requiring reliable performance and moderate current handling capabilities in industrial and consumer electronics systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other STMicroelectronics parts from the same MDmesh II family with similar voltage and current ratings, such as STP32NM50N, provided pin compatibility and thermal characteristics match the existing design requirements.

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