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STP25NM60ND is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 21A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STP25NM60ND
- Description：MOSFET N-CH 600V 21A TO220AB
- Series：FDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：160W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for STP25NM60ND
Single FETs, MOSFETs Overview
The STP25NM60ND is an N-channel Power MOSFET manufactured by STMicroelectronics, belonging to the MDmesh II series. It features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A at case temperature. The device utilizes TO-220FP through-hole packaging with a maximum power dissipation of 125W. Key electrical parameters include a typical on-resistance (Rds(on)) of 180mΩ at 10V gate drive and a maximum gate charge (Qg) of 73nC. It operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes second-generation MDmesh technology for optimized vertical structure and strip layout.
- Features low input capacitance and gate charge for efficient switching performance.
- Includes 100% avalanche testing for enhanced ruggedness in inductive load applications.
Single FETs, MOSFETs Applications
- High-efficiency isolated DC-DC converters
- Industrial motor control systems
- Power factor correction circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'D' indicates the TO-220FP package variant when sourcing. Confirm RoHS compliance status as per the latest manufacturer datasheet revision. Check for obsolescence notices or product change notifications prior to final design approval.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high-voltage handling with moderate current capacity. Compare Rds(on) and Qg values against alternative MDmesh II devices like the STP24NM60N or STP34NM60ND based on thermal and switching requirements. Ensure the TO-220FP footprint matches the PCB layout constraints.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh II family of high-voltage N-channel MOSFETs from STMicroelectronics. These devices are engineered to balance low on-resistance with fast switching speeds, making them suitable for various power conversion topologies where efficiency and reliability are critical.
Single FETs, MOSFETs Replacement Considerations
Potential substitutes within the same family include the STP24NM60N and STP34NM60ND. Verify pinout compatibility and thermal characteristics before substitution.
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