STP270N8F7

$4.36

Description：MOSFET N CH 80V 180A TO220
Series：DeepGATE™, STripFET™ VII
Mfr：STMicroelectronics
Package：Tube

SKU:414844eba93f Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STP270N8F7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N CH 80V 180A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP270N8F7

Description：MOSFET N CH 80V 180A TO220
Series：DeepGATE™, STripFET™ VII
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：193 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13600 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：315W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for STP270N8F7

STP270N8F7

Single FETs, MOSFETs Overview

The STP270N8F7 is an N-channel Power MOSFET from STMicroelectronics utilizing STripFET F7 technology. It features a drain-source breakdown voltage of 80 V and a typical on-state resistance (Rds(on)) of 1.7 mΩ. The device supports a continuous drain current of 180 A at case temperature and can handle a pulsed drain current of 720 A. Key electrical parameters include a gate charge of 193 nC, a fall time of 42 ns, and a maximum power dissipation of 315 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

Utilizes STripFET F7 technology with an enhanced trench gate structure for very low on-state resistance.
Designed for high-efficiency switching applications requiring fast transient response.

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power factor correction

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure the correct packaging type, such as tube or reel, matches your assembly requirements. Confirm that the component meets the required ECCN classification for export compliance. Ensure thermal management solutions are adequate for the specified power dissipation limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its sub-2 mΩ Rds(on). Consider the 80 V rating for low-voltage DC bus applications. Evaluate the TO-220 package constraints for through-hole mounting and heat sinking capabilities relative to the 315 W dissipation rating.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET F7 family of N-channel MOSFETs, designed to minimize figure-of-merit (FOM) for improved efficiency. The series targets high-current, low-voltage applications where switching speed and conduction loss are primary design drivers.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same STripFET F7 family with compatible pinouts and electrical ratings. Verify that alternative packages maintain similar thermal performance characteristics if space constraints differ.