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STP33N60M6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 25A TO220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STP33N60M6
- Description：MOSFET N-CH 600V 25A TO220
- Series：MDmesh™ M6
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.4 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1515 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：190W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for STP33N60M6
Single FETs, MOSFETs Overview
STP33N60M6 is an N-channel Power MOSFET utilizing MDmesh M6 super-junction technology, housed in a TO-220 package. It features a drain-source breakdown voltage of 600 V and a maximum on-resistance of 125 mΩ at VGS = 10 V. The device supports a continuous drain current of 25 A at Tcase = 25 °C and handles pulsed currents up to 78 A. Key electrical parameters include a gate threshold voltage ranging from 3.25 V to 4.75 V, total gate charge of 33.4 nC, and input capacitance of 1515 pF. Thermal resistance junction-to-case is 0.66 °C/W, with a maximum operating junction temperature of 150 °C.
Single FETs, MOSFETs Feature Summary
- MDmesh M6 super-junction technology providing improved RDS(on) per area compared to previous generations
- Optimized switching behavior for reduced switching losses
- Low gate input resistance for effective drive requirements
- 100% avalanche tested with integrated Zener protection
Single FETs, MOSFETs Applications
- Switching applications
- LLC converters
- Boost PFC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code STP33N60M6 against official STMicroelectronics documentation to confirm technical specifications. Ensure the TO-220 package type matches the design requirements. Confirm environmental compliance grades such as ECOPACK if applicable. Cross-reference absolute maximum ratings and thermal data with the target application's operational limits before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for high-efficiency power conversion designs requiring robust super-junction performance. The MDmesh M6 technology offers superior switching characteristics and lower on-resistance density. Consider the 600 V rating and 25 A continuous current capability for industrial and automotive power supplies. Evaluate thermal management needs based on the specified junction-to-case resistance.
Single FETs, MOSFETs Part Context
The STP33N60M6 belongs to the MDmesh M6 family of N-channel Power MOSFETs from STMicroelectronics. This series represents advancements over earlier MDmesh generations, focusing on efficiency improvements. The device is designed for demanding high-efficiency converter applications, leveraging strip layout vertical structures to minimize on-resistance and gate charge.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes within the same MDmesh M6 family include STO33N60M6 (TO-LL-8 package), STL33N60M6 (PowerFLAT 8x8 HV package), and STW33N60M6 (TO-247 package). Verify pinout compatibility and thermal dissipation capabilities when transitioning between different package types.
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