STP42N60M2-EP

Single FETs, MOSFETs Overview

The STP42N60M2-EP is an N-channel Power MOSFET utilizing MDmesh M2 EP technology, housed in a TO-220 package. It features a drain-source voltage of 650 V and a maximum on-resistance of 0.087 Ω at 10 V gate drive. The device supports a continuous drain current of 34 A at 25 °C case temperature and handles pulsed currents up to 136 A. Key electrical parameters include a total gate charge of 55 nC and a breakdown voltage of 600 V. Thermal resistance from junction to case is 50 °C/W, with a maximum operating junction temperature of 150 °C.

Single FETs, MOSFETs Feature Summary

• Extremely low gate charge for optimized switching performance
• Excellent output capacitance profile reducing turn-off losses
• 100% avalanche tested for enhanced ruggedness
• Integrated Zener protection between gate and source

Single FETs, MOSFETs Applications

• High frequency switching applications exceeding 150 kHz
• Demanding high-efficiency power converters
• Industrial power supply designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required TO-220 package configuration. Confirm environmental compliance requirements against ECOPACK specifications provided by the manufacturer. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for the intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and low conduction losses. Consider the 650 V rating for robust operation in mains-derived circuits. Evaluate the 34 A continuous current capability against peak load demands. Verify that the gate drive circuitry can effectively manage the 55 nC total gate charge for optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the STB/STP/STW42N60M2-EP family, sharing identical electrical characteristics across D²PAK, TO-220, and TO-247 packages. The 'EP' suffix denotes enhanced performance technology based on the MDmesh M2 structure. It serves as a high-reliability alternative for general-purpose high-voltage switching tasks.

Single FETs, MOSFETs Replacement Considerations

Direct functional substitutes within the same family include STB42N60M2-EP (D²PAK) and STW42N60M2-EP (TO-247). Cross-package replacements require verifying mechanical fit and thermal interface compatibility.