STP50N65DM6

Single FETs, MOSFETs Overview

The STP50N65DM6 is an N-channel Power MOSFET from the MDmesh DM6 series, housed in a TO-220 package. It features a 650 V drain-source breakdown voltage and a maximum on-resistance of 91 mΩ at VGS = 10 V. The device supports a continuous drain current of 33 A at 25 °C case temperature and handles pulsed currents up to 120 A. Total power dissipation reaches 250 W under specified thermal conditions. Key electrical parameters include a gate threshold voltage typified at 4 V, total gate charge of 52.5 nC, and extremely high dv/dt ruggedness rated at 100 V/ns.

Single FETs, MOSFETs Feature Summary

• Fast-recovery body diode with low reverse recovery charge and time for improved efficiency
• Lower RDS(on) per area compared to previous MDmesh fast generation
• Extremely high dv/dt ruggedness for reliable performance under large voltage transients
• Zener-protected gate structure

Single FETs, MOSFETs Applications

• High-efficiency bridge topologies
• ZVS phase-shift converters
• Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STP50N65DM6 against the manufacturer's official datasheet DS12360 Rev 4. Confirm that the required package is the standard TO-220 type A variant. Ensure application requirements align with the absolute maximum ratings, particularly regarding junction temperature limits and thermal resistance values for proper heat sinking design.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring 650 V blocking capability with optimized switching losses. The MDmesh DM6 technology offers lower gate charge and input capacitance compared to prior generations, facilitating faster switching speeds. Consider the TO-220 package constraints for thermal management, utilizing the low thermal resistance junction-to-case value for effective heat dissipation in high-power density designs.

Single FETs, MOSFETs Part Context

This device belongs to the STPOWER MDmesh DM6 family of super-junction power MOSFETs. It represents an evolution in STMicroelectronics' high-voltage discrete semiconductor portfolio, focusing on enhanced efficiency for demanding power conversion applications. The DM6 series integrates advanced super-junction technology to minimize conduction and switching losses simultaneously.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same series include STW50N65DM6 (TO-247 package) or STP52N65DM6 if pin-compatible alternatives are needed. Verify package dimensions and thermal characteristics when substituting, as physical mounting differences may require board layout adjustments.