ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
STP7NM60N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 5A TO220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STP7NM60N
- Description：MOSFET N-CH 600V 5A TO220
- Series：MDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：363 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for STP7NM60N
Single FETs, MOSFETs Overview
STP7NM60N is an N-channel enhancement mode power MOSFET from the MDmesh series by STMicroelectronics. It features a maximum drain-source voltage of 600 V and a continuous drain current of 7 A. The device utilizes TO-220 through-hole packaging with three pins. Key electrical parameters include a maximum on-resistance of 900 mΩ, a typical gate charge of 14 nC at 10 V, and a forward voltage of 1.3 V. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 20 W.
Single FETs, MOSFETs Feature Summary
- Utilizes MDmesh technology for low on-resistance and gate charge
- Enhanced avalanche ruggedness with 100% avalanche testing
- Low input capacitance and gate input resistance
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Power factor correction circuits
- General-purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package integrity and pin alignment upon receipt. Check datasheet revisions for any parameter updates. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage or electrostatic discharge before installation.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust high-voltage switching with moderate current capabilities. The TO-220 package facilitates efficient heat dissipation for thermal management. Consider the specific on-resistance and gate charge values for efficiency optimization in converter topologies. Evaluate thermal resistance requirements against the 20 W power dissipation limit for the chosen application environment.
Single FETs, MOSFETs Part Context
The STP7NM60N belongs to the MDmesh family of power MOSFETs developed by STMicroelectronics. This series integrates vertical structure with strip layout to minimize conduction and switching losses. It serves as a discrete solution for medium-power applications where reliability and efficiency are critical design constraints.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other MDmesh series parts like STF7NM60N or STL7NM60N for alternative packages. Verify pinout compatibility and thermal characteristics when substituting. Ensure voltage and current ratings meet or exceed original design specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
