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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A 8SOIC
- Series：STripFET™ V
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A
- Rds On (Max) @ Id, Vgs：21mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：475pF @ 25V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The STS10DN3LH5 is an active dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. It operates at a drain-source voltage of 30 V with a typical on-state resistance (RDS(on)) of 0.0155 Ohm and supports a continuous drain current of 10 A. The device utilizes a SO-8 package to provide high power density in a compact form factor. This component is engineered to deliver industry-benchmark performance metrics, specifically optimizing the figure of merit through low on-resistance and switching gate charge characteristics.
Feature Summary
- STripFET™ V technology optimized for extremely low on-resistance and best-in-class figure of merit
- High avalanche ruggedness ensuring robust operation under transient conditions
- Very low switching gate charge resulting in reduced gate drive power losses
Applications
- DC-DC converters
- Motor control applications
- Power management systems
Procurement Notes
Verify the specific ordering code against the manufacturer's official datasheet to ensure correct pinout and thermal specifications. Confirm that the SO-8 package variant matches the required PCB footprint and soldering profile. Cross-reference the RDS(on) tolerance limits with circuit requirements before finalizing procurement orders.
Selection Notes
Select this dual MOSFET when space constraints require two independent channels in a single SO-8 package. Prioritize this component for designs demanding low conduction losses and high efficiency. Ensure the application voltage remains within the 30 V limit and verify that the 10 A current rating accommodates peak load requirements without exceeding thermal boundaries.
Part Context
This part belongs to the STripFET™ V family of power MOSFETs designed for high-efficiency switching applications. It serves as a dual-channel alternative to single discrete packages, reducing board area. The technology focuses on minimizing the product of on-resistance and gate charge to improve overall system performance.
Replacement Considerations
Consult official substitution lists for equivalent dual N-channel 30 V MOSFETs in SO-8 packages. Verify compatibility regarding pin configuration and thermal resistance values before replacing existing components in established designs.
