STS1DNC45

Overview

The STS1DNC45 is a dual N-channel SuperMESH Power MOSFET manufactured by STMicroelectronics. It features a 450 V drain-source breakdown voltage and a continuous drain current of 400 mA. The device exhibits a typical on-resistance of 4.1 Ohms and operates with a gate-source voltage range of -30 V to +30 V. Key electrical parameters include a gate charge of 10 nC, threshold voltage of 2.3 V, and power dissipation of 2 W. Switching characteristics show rise and fall times of 4 ns. It functions in enhancement mode within an SOIC-8 surface-mount package, supporting an operating temperature range from -65 °C to +150 °C.

Feature Summary

• SuperMESH technology provides optimized strip-based layout for minimized on-resistance and high dv/dt capability.
• Dual N-channel configuration integrated into a standard SOIC-8 outline for automated surface mount assembly.

Applications

• High-voltage power conversion circuits requiring compact dual-switch solutions.
• Industrial applications demanding robust high-voltage switching performance.
• Automotive electronics utilizing high dv/dt tolerance components.

Procurement Notes

Verify the current lifecycle status before design finalization, as this component may be classified as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors and check for potential obsolescence notices from STMicroelectronics to ensure long-term supply chain stability for production runs.

Selection Notes

Select this component when a dual N-channel MOSFET with 450 V rating and low on-resistance is required in an SOIC-8 package. Ensure the application current does not exceed 400 mA continuous and that thermal management supports 2 W dissipation. Verify compatibility with -30 V to +30 V gate drive levels and confirm suitability for temperatures up to 150 °C.

Part Context

This part belongs to the SuperMESH series, which optimizes ST’s PowerMESH layout for lower on-resistance and improved dv/dt handling. It complements ST’s broader high-voltage MOSFET portfolio, including MDmesh products, targeting demanding industrial and automotive power applications where efficiency and switching speed are critical.

Replacement Considerations

Consult official substitution lists for equivalent dual N-channel 450V MOSFETs in SOIC-8 packages. Verify pinout compatibility and electrical parameter alignment with alternatives such as other SuperMESH variants or comparable high-voltage dual MOSFETs from STMicroelectronics.