STS1NK60Z

Single FETs, MOSFETs Overview

The STS1NK60Z is an N-channel SuperMESH Power MOSFET manufactured by STMicroelectronics, housed in an 8-pin SOP-8 surface-mount package. It features a drain-source voltage rating of 600 V and a continuous drain current of 250 mA. The device exhibits a typical on-resistance of 15 Ω at 400 mA with a 10 V gate drive. Key electrical parameters include a gate charge of 6.9 nC at 10 V, input capacitance of 94 pF at 25 V, and a threshold voltage of 4.5 V at 50 µA. Switching characteristics specify a turn-on delay of 5.5 ns, fall time of 28 ns, rise time of 5 ns, and turn-off delay of 13 ns. The component supports a maximum power dissipation of 2 W and operates within a junction temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• SuperMESH technology optimization for minimized gate charge and significantly reduced on-resistance compared to standard layouts.
• Integrated Zener diode protection between the gate and source terminals to enhance ESD robustness.
• Extremely high dv/dt capability designed for demanding applications requiring fast switching stability.
• 100% avalanche tested to ensure reliability under transient energy stress conditions.

Single FETs, MOSFETs Applications

• Industrial control systems requiring high-voltage switching
• Power supplies utilizing SO-8 surface mount packaging
• Applications necessitating enhanced ESD protection and high dv/dt immunity

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant when sourcing, as STMicroelectronics may offer multiple pin configurations or tape-and-reel options for the SOP-8 form factor. Confirm that the requested unit matches the industrial grade specifications and the 250 mA current rating defined in the datasheet. Ensure compatibility with the 600 V breakdown voltage requirements of the target circuit design before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs prioritizing compact surface-mount integration alongside high-voltage isolation capabilities. The 15 Ω on-resistance suits low-current switching tasks where minimizing board space is critical. Consider the integrated Zener protection for environments prone to electrostatic discharge events. Evaluate the thermal management requirements against the 2 W power dissipation limit to ensure reliable operation within the specified temperature range.

Single FETs, MOSFETs Part Context

This device belongs to the SuperMESH series, which represents an optimized evolution of ST's PowerMESH layout technology. The series complements the broader MDmesh portfolio by offering specific advantages in gate charge reduction and dv/dt performance. It targets applications needing robust high-voltage switching in small packages, bridging the gap between discrete components and more complex integrated solutions.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same SuperMESH family include STF12NK60Z (TO-220FP), STP10NK60ZFP (TO-220), and STW10NK60Z (TO-220). For equivalent SMD packages, consider STN1NK60Z (SOT-223) or STD1NK60T4 (DPAK), noting differences in current ratings and thermal performance.

Single FETs, MOSFETs FAQ

What is the purpose of the internal Zener diode in the STS1NK60Z?

The internal Zener diode connects the gate and source terminals to provide enhanced Electrostatic Discharge (ESD) protection, safeguarding the gate oxide layer from voltage spikes.

How does the SuperMESH technology improve performance over standard MOSFETs?

SuperMESH technology optimizes the strip-based layout to minimize gate charge and reduce on-resistance while maintaining extremely high dv/dt capability for stable switching in demanding applications.