STS2DNF30L

$1.05

Description：MOSFET 2N-CH 30V 3A 8SOIC
Series：STripFET™

SKU:117a69c41bcc Category: FET, MOSFET Arrays Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 3A 8SOIC
Series：STripFET™
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3A
Rds On (Max) @ Id, Vgs：110mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：121pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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STS2DNF30L

Overview

The STS2DNF30L is an N-channel 30 V, 3 A STripFET II POWER MOSFET housed in a SO-8 package. It utilizes STMicroelectronics' unique "single feature size" strip-based process to achieve extremely high packing density and low on-resistance of 90 mOhm. The device features rugged avalanche characteristics and less critical alignment steps for remarkable manufacturing reproducibility. Designed for easy automated surface mount assembly, it supports low threshold gate drive applications.

Feature Summary

Utilizes unique "single feature size" strip-based process technology
Provides extremely high packing density with low on-resistance
Features rugged avalanche characteristics for enhanced reliability
Designed for standard outline automated surface mount assembly

Applications

Low-voltage industrial applications
Automotive applications

Procurement Notes

Verify the NRND (Not Recommended for New Designs) status before initiating any new procurement or design-in activities. Confirm current availability through authorized distributors as this component may be subject to end-of-life transitions. Ensure that the specific SO-8 package variant matches your PCB footprint requirements. Cross-reference the datasheet revision date to ensure compatibility with latest electrical specifications.

Selection Notes

Select this component for designs requiring a 30 V N-channel MOSFET with 3 A continuous current capability. The 90 mOhm on-resistance makes it suitable for low-loss switching applications. Consider the SO-8 package constraints for thermal management and board space. Verify that the low threshold gate drive aligns with your controller's output voltage levels for efficient switching performance.

Part Context

This part belongs to the STripFET II series from STMicroelectronics, which focuses on power MOSFETs optimized for high density and efficiency. The series covers a broad range of breakdown voltages, including low-voltage options from 12 V to 30 V. These devices are engineered for diverse industrial and automotive markets, leveraging advanced strip-based processes to improve performance and manufacturability compared to previous generations.