STS3DNE60L

Overview

The STS3DNE60L is a dual N-channel Power MOSFET utilizing STMicroelectronics' Single Feature Size strip-based process. It features a typical on-resistance of 0.065 Ω and supports a continuous drain current of 3 A at 25°C. The device operates with a drain-source voltage of 60 V and includes an integrated body diode. Packaged in a standard SO-8 outline, it offers low threshold gate drive for efficient control. Key electrical parameters include a maximum RDS(on) of 0.08 Ω at VGS=10V and 0.1 Ω at VGS=4.5V. Total power dissipation reaches 2.0 W in single operation mode.

Feature Summary

• Single Feature Size strip-based manufacturing process ensures high packing density and remarkable reproducibility.
• Low threshold gate drive capability facilitates easy interface with logic-level controllers.
• Standard SO-8 surface mount outline designed for automated assembly compatibility.

Applications

• DC motor drive circuits
• DC-DC converters
• Battery management systems in nomadic equipment
• Power management in portable and desktop PCs

Procurement Notes

Verify the obsolete status of this component before initiating any procurement activities. Confirm availability through authorized distributors or secondary markets if active sourcing is required. Ensure that replacement components meet all original electrical specifications and thermal requirements to maintain system integrity.

Selection Notes

Select this component for applications requiring dual N-channel configurations in compact SO-8 packages. Consider its 60 V breakdown voltage and 3 A continuous current rating for low-power switching tasks. Evaluate the 0.065 Ω typical on-resistance for efficiency needs in battery-operated devices where low gate charge is beneficial.

Part Context

This part belongs to the STripFET family of power MOSFETs from STMicroelectronics. It represents an earlier generation of strip-based technology designed for cost-effective, high-density packaging. The device is distinct from newer MDmesh or SuperMESH series products which offer advanced super-junction capabilities.

Replacement Considerations

As an obsolete product, direct replacements must be sourced carefully. Verify pinout compatibility with the SO-8 package. Ensure substitute parts match the 60 V rating and dual-channel configuration. Check thermal resistance values to ensure adequate heat dissipation in existing designs.

FAQ

What is the maximum drain-source voltage for the STS3DNE60L?

The maximum drain-source voltage (VDS) is rated at 60 V.

Does the STS3DNE60L include an internal body diode?

Yes, the device includes an integrated source-drain diode with a forward voltage of 1.2 V at 3 A.

What is the typical gate threshold voltage?

The typical gate threshold voltage (VGS(th)) is 1 V when measured at ID = 250 µA.