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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4A 8SOIC
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：90mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：315pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The STS4DNF60L is an N-Channel Power MOSFET from STMicroelectronics, utilizing the STripFET II technology. It features a 60V drain-source voltage rating and a maximum continuous drain current of 4A at 25°C case temperature. The device exhibits a low on-resistance (Rds(on)) of 0.045 Ohm. Packaged in an SO-8 outline, it is designed for automated surface mount assembly. Key electrical limits include a gate-source voltage of ±20V and a total power dissipation of 1.6W at 25°C.
Feature Summary
- STripFET II process providing high packing density and rugged avalanche characteristics
- Standard SO-8 outline facilitating easy automated surface mount assembly
- Low threshold drive capability for efficient control
Applications
- Switching applications requiring low on-resistance
- Automated surface mount assembly processes
Procurement Notes
Verify the exact part number suffix, as documentation references STS4DNF60L. Confirm the package type is SO-8 and check for specific ordering codes like '4DF60L' markings. Ensure compatibility with required thermal management given the 1.6W power dissipation limit at 25°C. Cross-reference datasheet revision history for any parameter updates.
Selection Notes
Select this component for low-voltage, low-current switching tasks where compact SO-8 packaging is preferred. The 0.045 Ohm Rds(on) offers efficiency benefits over higher resistance alternatives. Consider the 4A continuous current limit and thermal constraints when designing heat dissipation paths for the application environment.
Part Context
This device belongs to STMicroelectronics' STripFET II family of N-channel Power MOSFETs. It shares technological roots with other medium-voltage devices but is distinct in its specific 60V/4A rating and SO-8 form factor. It differs from dual-channel variants like the STS5DNF60L by offering a single channel configuration.
Replacement Considerations
Direct substitutes within the same series include the STS5DNF60L, which is a dual N-channel version with identical electrical ratings. Designers should verify pinout compatibility and ensure that the dual-channel option does not introduce unwanted parasitic effects if only one channel is utilized.
