STS4DPF20L

STS4DPF20L

$2.20
  • Description:MOSFET 2P-CH 20V 4A 8SOIC
  • Series:STripFET™

SKU:c391ea04a7d9 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 4A 8SOIC
  • Series:STripFET™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4A
  • Rds On (Max) @ Id, Vgs:80mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1350pF @ 25V
  • Power - Max:1.6W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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STS4DPF20L

Overview

The STS4DPF20L is a dual P-channel power MOSFET manufactured by STMicroelectronics using the STripFET II technology. It features a typical on-resistance (RDS(on)) of 0.045 Ω at a drain-source voltage of 20 V and supports a continuous drain current of 5 A. The device is housed in an SO-8 package, providing a compact solution for surface mount assembly. Key electrical characteristics include low conduction losses and reduced switching losses, making it suitable for high-efficiency power management applications.

Feature Summary

  • Utilizes Single Feature Size strip-based process for high packing density and rugged avalanche characteristics.
  • Features low threshold drive capability to facilitate easy interface with standard logic levels.
  • Designed with standard outline dimensions to enable automated surface mount assembly processes.

Applications

  • DC/DC converters
  • Battery management in nomadic equipment
  • Power management in cellular phones
  • DC motor drive

Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm package type and temperature range. Ensure compatibility with the target PCB footprint for the SO-8 package. Cross-reference the RDS(on) specifications under actual operating conditions rather than relying solely on typical values found in summary tables.

Selection Notes

Select this component when a dual P-channel configuration is required in a small form factor. The 0.045 Ω on-resistance offers a balance between conduction loss and cost for 20 V systems. Consider the thermal performance of the SO-8 package for the expected load current and ambient temperature conditions.

Part Context

This part belongs to the STS5DPx series of dual P-channel MOSFETs. It shares similar technological foundations with other devices in the STripFET II family, emphasizing manufacturing reproducibility and low alignment sensitivity. It serves as a complementary solution to N-channel counterparts in bridge and half-bridge circuits.

Replacement Considerations

Direct substitutes may include other dual P-channel MOSFETs with similar 20 V ratings and SO-8 packaging. Verify pinout compatibility and thermal resistance parameters before substitution. Check if alternative parts offer improved RDS(on) or higher current handling if system requirements change.

STS4DPF20LSTS4DPF20L
$2.20
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