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The STS5DPF20L is a P-channel enhancement mode Power MOSFET manufactured by STMicroelectronics using the STripFET II process. It features a maximum drain-source voltage of 20 V and a continuous drain current of 5 A at 25°C case temperature. The device exhibits a typical on-resistance of 0.045 Ω, reducing conduction losses. Packaged in an SO-8 outline for automated surface mount assembly, it supports a total dissipation of 1.6 W dual operating. Key electrical parameters include a gate threshold voltage of 1.6 V typical and a total gate charge of 12.5 nC.
Verify component status as the datasheet indicates this product is obsolete. Confirm availability with authorized distributors or secondary market suppliers. Ensure sourcing channels provide original manufacturer packaging and documentation to validate authenticity before integration into designs.
Select this component for low-voltage P-channel switching requirements where compact surface-mount form factors are necessary. Evaluate thermal performance against the specified junction-to-case resistance values. Consider the 20 V breakdown limit when designing circuits with potential voltage transients exceeding the absolute maximum ratings.
This part belongs to the STripFET II series of power MOSFETs from STMicroelectronics. The series utilizes advanced strip-based processing technology to achieve superior performance metrics compared to standard planar devices. It represents a specific generation of low-voltage power switches designed for efficiency in portable and industrial electronics.
As the product is marked obsolete, direct replacements must be sourced from updated STMicroelectronics portfolios or equivalent manufacturers. Verify pin compatibility and electrical specifications such as RDS(on) and VGS(th) when selecting alternative components.
The maximum pulsed drain current (IDM) is 20 A, limited by the safe operating area.
Yes, the device includes a source-drain diode with a forward on voltage of 1.2 V at 5 A and a reverse recovery time of 45 ns.
The operating junction temperature range is -55°C to +150°C.