STS5DPF20L

STS5DPF20L

  • Description:MOSFET 2P-CH 20V 5A 8SOIC
  • Series:STripFET™ II

SKU:1be422a27d95 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 5A 8SOIC
  • Series:STripFET™ II
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5A
  • Rds On (Max) @ Id, Vgs:55mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1350pF @ 16V
  • Power - Max:1.6W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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STS5DPF20L

Overview

The STS5DPF20L is a P-channel enhancement mode Power MOSFET manufactured by STMicroelectronics using the STripFET II process. It features a maximum drain-source voltage of 20 V and a continuous drain current of 5 A at 25°C case temperature. The device exhibits a typical on-resistance of 0.045 Ω, reducing conduction losses. Packaged in an SO-8 outline for automated surface mount assembly, it supports a total dissipation of 1.6 W dual operating. Key electrical parameters include a gate threshold voltage of 1.6 V typical and a total gate charge of 12.5 nC.

Feature Summary

  • Utilizes unique Single Feature Size strip-based process for high packing density and low on-resistance.
  • Designed to reduce both conduction and switching losses through optimized channel architecture.
  • Features low threshold drive capability suitable for logic-level control applications.

Applications

  • DC/DC converters
  • Battery management in nomadic equipment
  • Power management in cellular phones
  • DC motor drive

Procurement Notes

Verify component status as the datasheet indicates this product is obsolete. Confirm availability with authorized distributors or secondary market suppliers. Ensure sourcing channels provide original manufacturer packaging and documentation to validate authenticity before integration into designs.

Selection Notes

Select this component for low-voltage P-channel switching requirements where compact surface-mount form factors are necessary. Evaluate thermal performance against the specified junction-to-case resistance values. Consider the 20 V breakdown limit when designing circuits with potential voltage transients exceeding the absolute maximum ratings.

Part Context

This part belongs to the STripFET II series of power MOSFETs from STMicroelectronics. The series utilizes advanced strip-based processing technology to achieve superior performance metrics compared to standard planar devices. It represents a specific generation of low-voltage power switches designed for efficiency in portable and industrial electronics.

Replacement Considerations

As the product is marked obsolete, direct replacements must be sourced from updated STMicroelectronics portfolios or equivalent manufacturers. Verify pin compatibility and electrical specifications such as RDS(on) and VGS(th) when selecting alternative components.

FAQ

What is the maximum pulsed drain current for the STS5DPF20L?

The maximum pulsed drain current (IDM) is 20 A, limited by the safe operating area.

Does the STS5DPF20L have an integrated body diode?

Yes, the device includes a source-drain diode with a forward on voltage of 1.2 V at 5 A and a reverse recovery time of 45 ns.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

STS5DPF20LSTS5DPF20L

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