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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 7A/4A 8SOIC
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A, 4A
- Rds On (Max) @ Id, Vgs：22mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1050pF @ 25V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The STS7C4F30L is a dual-channel Power MOSFET from the STripFET series, integrating an N-channel and a P-channel device within a single SO-8 surface-mount package. The N-channel component provides a maximum drain-source voltage of 30 V, a continuous drain current of 7 A, and a typical on-resistance of 0.018 Ω. The P-channel counterpart offers a 30 V rating, a 4 A continuous current capability, and a typical on-resistance of 0.070 Ω. Both channels operate with a maximum junction temperature of 150 °C and utilize a low threshold drive design.
Feature Summary
- Single Feature Size strip-based process for high packing density
- Low threshold drive capability for efficient control
- Rugged avalanche characteristics for enhanced reliability
Applications
- DC/DC converters
- Battery management in nomadic equipment
- Power management in cellular phones
Procurement Notes
This component is officially classified as obsolete by the manufacturer. Verification should focus on confirming the specific ordering suffixes available through secondary distributors or surplus suppliers. Ensure that any replacement units match the original SO-8 mechanical dimensions and pinout configuration to maintain compatibility with existing printed circuit board layouts.
Selection Notes
Designers requiring active procurement options must evaluate alternative components within the STripFET family or other manufacturers offering similar dual-channel configurations. Selection criteria should prioritize matching the 30 V breakdown voltage and ensuring the replacement part meets the required thermal resistance and on-resistance specifications for the intended application environment.
Part Context
The STS7C4F30L belongs to the STripFET POWER MOSFET series developed by STMicroelectronics. This series utilizes a proprietary strip-based manufacturing process designed to achieve low on-resistance and improved manufacturing reproducibility. The dual-channel architecture allows for compact integration of complementary switching elements in space-constrained electronic designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not identified in the provided documentation. Engineers should consult official manufacturer cross-reference guides or authorized distributor databases to identify equivalent active devices that satisfy the electrical and mechanical requirements.
