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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A 8SOIC
- Series：STripFET™ V
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A
- Rds On (Max) @ Id, Vgs：19mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：724pF @ 25V
- Power - Max：2.7W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The STS8DN3LLH5 is an automotive-grade dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET V technology. It features a typical on-state resistance of 0.0155 Ohm and a continuous drain current of 10 A. The device is housed in a SO-8 package and is optimized for very low on-state resistance, contributing to a figure of merit among the best in its class. Key electrical characteristics include a maximum gate threshold voltage of 3V at 250µA, a maximum gate charge of 12nC at 4.5V, and a maximum input capacitance of 1500pF at 25V. It supports logic level gate drive and operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Extremely low on-resistance R DS(on) with industry benchmark FOM
- Very low switching gate charge for efficient operation
- High avalanche ruggedness for robust performance
Applications
- Industrial motor control systems
- Automotive power management circuits
- Low-voltage DC-DC converter stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration in an SO-8 package is required for automotive or industrial applications. The STripFET V technology offers a balance of low on-resistance and low gate charge, suitable for high-efficiency switching applications. Ensure the thermal design accommodates the power dissipation limits specified in the datasheet for the chosen operating conditions.
Part Context
This device belongs to the STL/STS DN3LLH5 series of low-voltage Power MOSFETs from STMicroelectronics. These components are designed for applications requiring breakdown voltages between 12 V and 30 V. The series leverages advanced STripFET technologies to minimize conduction losses while maintaining high switching speeds, making them suitable for modern power electronics designs focused on efficiency and compact form factors.
Replacement Considerations
Direct replacements should be sought from the same STL/STS DN3LLH5 family or other STMicroelectronics dual N-channel MOSFETs in SO-8 packages with comparable R DS(on) and current ratings. Verify pin compatibility and thermal characteristics before substitution. Consult the official replacement guide for cross-reference data.
