STS8DNH3LL

STS8DNH3LL

$1.39
  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:STripFET™ III

SKU:369cb2de1fa8 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:STripFET™ III
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:857pF @ 25V
  • Power - Max:2W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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STS8DNH3LL

Overview

The STS8DNH3LL is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET V technology. It operates at a drain-source voltage of 30 V with a typical on-state resistance of 0.0155 Ohms and supports a continuous current of 10 A. Packaged in an SO-8 format, the device is engineered to minimize input capacitance and gate charge, providing an optimal trade-off between conduction and switching losses. This makes it suitable for primary switching in advanced high-efficiency isolated DC-DC converters for telecom and computer applications.

Feature Summary

  • STripFET V technology tailored for very low on-state resistance and industry benchmark FOM
  • Extremely low switching gate charge reducing gate drive power losses
  • High avalanche ruggedness ensuring robust operation under transient conditions

Applications

  • Primary switch in advanced high-efficiency isolated DC-DC converters
  • Telecom power supply systems
  • Computer application power management

Procurement Notes

Verify the exact part number suffix against official STMicroelectronics documentation to ensure correct package and temperature grade specifications. Confirm active status through authorized distributors as product lifecycle stages may change. Request original datasheets for precise electrical parameter validation before integration into design schematics.

Selection Notes

Select this component when low gate charge driving requirements are critical for system efficiency. The STripFET V process offers reduced conduction and switching losses compared to standard MOSFETs. Ensure the 30 V rating aligns with the specific circuit voltage levels and that the SO-8 package fits the available PCB footprint constraints.

Part Context

This device belongs to the STS8D series of dual N-channel Power MOSFETs utilizing STripFET V technology. The series is designed to provide best-in-class figure of merit (FOM) by balancing low on-resistance with minimal gate charge. It serves as a key component in modern power conversion architectures requiring high density and efficiency.

Replacement Considerations

Check for direct substitutes within the STS8DN3LL family or other STripFET V dual MOSFETs with matching 30 V and 10 A ratings. Verify pin compatibility and thermal performance characteristics before swapping components in existing designs.

STS8DNH3LLSTS8DNH3LL
$1.39
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