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The STS8DNH3LL is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET V technology. It operates at a drain-source voltage of 30 V with a typical on-state resistance of 0.0155 Ohms and supports a continuous current of 10 A. Packaged in an SO-8 format, the device is engineered to minimize input capacitance and gate charge, providing an optimal trade-off between conduction and switching losses. This makes it suitable for primary switching in advanced high-efficiency isolated DC-DC converters for telecom and computer applications.
Verify the exact part number suffix against official STMicroelectronics documentation to ensure correct package and temperature grade specifications. Confirm active status through authorized distributors as product lifecycle stages may change. Request original datasheets for precise electrical parameter validation before integration into design schematics.
Select this component when low gate charge driving requirements are critical for system efficiency. The STripFET V process offers reduced conduction and switching losses compared to standard MOSFETs. Ensure the 30 V rating aligns with the specific circuit voltage levels and that the SO-8 package fits the available PCB footprint constraints.
This device belongs to the STS8D series of dual N-channel Power MOSFETs utilizing STripFET V technology. The series is designed to provide best-in-class figure of merit (FOM) by balancing low on-resistance with minimal gate charge. It serves as a key component in modern power conversion architectures requiring high density and efficiency.
Check for direct substitutes within the STS8DN3LL family or other STripFET V dual MOSFETs with matching 30 V and 10 A ratings. Verify pin compatibility and thermal performance characteristics before swapping components in existing designs.