STT3P2UH7

$0.69

Description：MOSFET P-CH 20V 3A SOT23-6
Series：STripFET™
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ffeb8b381ec0 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STT3P2UH7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET P-CH 20V 3A SOT23-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STT3P2UH7

Description：MOSFET P-CH 20V 3A SOT23-6
Series：STripFET™
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：100mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：510 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.6W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-6
Package / Case：SOT-23-6

Single FETs, MOSFETs datasheet and documents for STT3P2UH7

STT3P2UH7

Single FETs, MOSFETs Overview

The STT3P2UH7 is a P-channel Power MOSFET utilizing STripFET H7 technology, featuring a trench gate structure combined with extremely low on-resistance. It offers ultra-low capacitances for higher switching frequency operations and high avalanche ruggedness. The device is rated for 20 V with a typical on-resistance of 0.087 Ohm and supports a current of 3 A. It is housed in a SOT23-6L package.

Single FETs, MOSFETs Feature Summary

Very low on-resistance
Very low capacitance and gate charge
High avalanche ruggedness

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or secondary market channels as standard supply may be discontinued. Ensure compatibility with existing design specifications if replacing active inventory.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring efficient power switching with minimal conduction losses. The low gate charge supports high-frequency operation, while the ruggedness ensures reliability under transient conditions. Evaluate thermal management requirements based on the specific load current and ambient temperature conditions.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET H7 family of power MOSFETs from STMicroelectronics. These devices are designed for high-efficiency power management applications, leveraging advanced trench gate technology to minimize resistance and switching losses compared to previous generations.