STU70R1K3S

Single FETs, MOSFETs Overview

The STU70R1K3S is a high-voltage N-channel Power MOSFET from the MDmesh K3 series by STMicroelectronics. It features a 700 V drain-source voltage rating and a maximum continuous drain current of 2.5 A. The device exhibits a low on-resistance (RDS(on)) of 1.3 Ohms at a gate-source voltage of 10 V. Packaged in a TO-251-3 (DPAK) surface-mount housing, it supports a junction temperature range from -55 °C to +150 °C. Key electrical characteristics include a gate charge of 18 nC and a total gate input resistance of 4.7 Ohms.

Single FETs, MOSFETs Feature Summary

• MDmesh K3 technology provides reduced switching losses and lower RDS(on) per area compared to previous generations.
• Integrated Zener protection between gate and source terminals enhances robustness against electrostatic discharge.
• 100% avalanche tested for improved reliability in inductive switching applications.
• Low gate input resistance facilitates stable driving and reduces susceptibility to false turn-on.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Motor control circuits
• Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the component marking '70R1K3S' on the package top to confirm authenticity. Ensure the datasheet revision matches the manufacturing date code. Check for physical damage to the leads and verify the TO-251-3 footprint dimensions against your PCB design. Confirm RoHS compliance status if required by your assembly specifications.

Single FETs, MOSFETs Selection Notes

Select this part when a 700 V breakdown voltage is required with moderate current handling capabilities. The TO-251-3 package offers a balance between thermal performance and board space efficiency. Consider the 1.3 Ohm RDS(on) for conduction loss calculations in low-current applications. The integrated Zener diode simplifies gate drive circuit design by eliminating external protection components.

Single FETs, MOSFETs Part Context

This component belongs to the STMicroelectronics MDmesh K3 family of N-channel Power MOSFETs. The series is engineered for high-voltage applications requiring efficient switching and robust avalanche performance. The 'STU' prefix indicates a specific packaging and pinout configuration within the broader MDmesh portfolio.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other STMicroelectronics MDmesh K3 devices with similar voltage and current ratings, such as the STU6N65K5 or STU7N65M2, provided the pinout and thermal characteristics are compatible. Verify that alternative parts meet the same 700 V rating and TO-251-3 package constraints.

Single FETs, MOSFETs FAQ

What is the purpose of the internal Zener diode in the STU70R1K3S?

The internal Zener diode connected between the gate and source protects the gate oxide layer from overvoltage stress and electrostatic discharge events, enhancing device reliability during handling and operation.

How does the MDmesh K3 technology improve performance?

MDmesh K3 technology reduces switching losses and lowers the on-resistance per unit area compared to earlier generations, allowing for higher efficiency and better thermal management in compact designs.