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STU9N60M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 5.5A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STU9N60M2
- Description：MOSFET N-CH 600V 5.5A IPAK
- Series：MDmesh™ II Plus
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：780mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：320 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251 (IPAK)
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for STU9N60M2
Single FETs, MOSFETs Overview
The STU9N60M2 is an N-channel Power MOSFET developed using MDmesh M2 technology. It features a 600V breakdown voltage and a typical on-resistance of 720 mOhm. The device supports a continuous drain current of 5.5A and is housed in an IPAK (TO-251) package for through-hole mounting.
Single FETs, MOSFETs Feature Summary
- Utilizes MDmesh M2 technology with strip layout for low on-resistance and optimized switching characteristics
- Features extremely low gate charge and excellent output capacitance profile
- Includes integrated Zener protection between gate and source
- Subjected to 100% avalanche testing for enhanced reliability
Single FETs, MOSFETs Applications
- High-efficiency power converters
- Switch-mode power supplies (SMPS)
- General-purpose high-voltage switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free certification requirements prior to procurement. Ensure the selected variant matches the required thermal and electrical parameters for the target application design.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust high-voltage performance with efficient switching capabilities. The MDmesh M2 technology provides a favorable balance between conduction losses and switching speed. Consider the TO-251 package constraints for thermal management and PCB layout when integrating into the final circuit design.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh M2 series of N-channel Power MOSFETs from STMicroelectronics. The series is characterized by improved vertical structures that deliver superior performance compared to previous generations, targeting demanding applications where efficiency and reliability are critical factors in system design.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current handling, and package dimensions.
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