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STW15NM60ND is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 14A TO247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for STW15NM60ND
- Description：MOSFET N-CH 600V 14A TO247-3
- Series：FDmesh™ II
- Mfr：STMicroelectronics
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：299mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1250 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for STW15NM60ND
Single FETs, MOSFETs Overview
The STW15NM60ND is an N-channel enhancement mode Power MOSFET from the MDmesh II series by STMicroelectronics. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 14 A in the TO-247 package. The device exhibits a typical on-state resistance (Rds(on)) of 0.27 Ω at 10 V gate drive. Designed for through-hole mounting, it supports a maximum power dissipation of 125 W and operates within a temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes MDmesh II technology for optimized performance
- High breakdown voltage capability for robust switching
- Enhanced mode operation for standard logic control
Single FETs, MOSFETs Applications
- General purpose power switching
- DC-DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'ND' against official STMicroelectronics documentation to confirm pinout and thermal characteristics. Ensure the procurement source provides valid RoHS compliance certificates. Cross-reference the datasheet revision date to guarantee parameter accuracy. Confirm availability status as manufacturing lifecycle stages may affect supply continuity.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V rating and 14 A current capacity are required in a TO-247 form factor. Consider the 0.27 Ω Rds(on) for conduction loss calculations. Evaluate thermal management requirements given the 125 W dissipation limit. Compare against other MDmesh variants if lower on-resistance or different packaging is needed.
Single FETs, MOSFETs Part Context
This part belongs to the MDmesh family of power MOSFETs, designed for high-efficiency switching applications. The MDmesh II generation offers improved figure-of-merit compared to previous iterations. It is distinct from surface-mount packages like D2PAK, providing mechanical stability for through-hole PCB designs.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes with identical pinouts and electrical ratings. Verify that any replacement maintains the 600 V Vds and 14 A Id specifications. Ensure thermal resistance values are compatible with existing heatsinking solutions.
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