Single FETs, MOSFETs STW7N90K5 product image

STW7N90K5

$2.83
  • Description:MOSFET N-CH 900V 7A TO247-3
  • Series:MDmesh™ K5
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:d44fa7944e65 Category: Brand:

  
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STW7N90K5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 900V 7A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STW7N90K5

  • Description:MOSFET N-CH 900V 7A TO247-3
  • Series:MDmesh™ K5
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):900 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for STW7N90K5

STW7N90K5

Single FETs, MOSFETs Overview

STW7N90K5 is an N-channel enhancement mode Power MOSFET from the SuperMESH series, utilizing MDmesh K5 technology. It features a maximum drain-source voltage of 900 V and a continuous drain current of 6 A. The device has a typical on-resistance of 2 Ohms and a gate charge of 46.5 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation of 140 W in a TO-247-3 through-hole package.

Single FETs, MOSFETs Feature Summary

  • MDmesh K5 technology provides reduced on-resistance and ultra-low gate charge for high efficiency.
  • Innovative proprietary vertical structure enables superior power density.
  • High breakdown voltage capability suitable for demanding high-voltage applications.

Single FETs, MOSFETs Applications

  • High-efficiency power conversion systems
  • Applications requiring superior power density
  • High-voltage switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'K5' against official STMicroelectronics documentation to confirm the exact electrical characteristics and package variant. Ensure the component matches the required voltage and current ratings for the target design. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with moderate current handling is required. The TO-247 package facilitates through-hole mounting and heatsinking. Consider the trade-off between the 2 Ohm on-resistance and the low gate charge for switching speed requirements.

Single FETs, MOSFETs Part Context

The STW7N90K5 belongs to the SuperMESH family, which integrates MDmesh K5 technology. This series focuses on optimizing the balance between conduction losses and switching performance for high-voltage power electronics.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same SuperMESH family, such as STW8N90K5 or STP7N90K5, ensuring their electrical parameters meet the circuit requirements.

STW7N90K5STW7N90K5
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