STW8NB100

$2.05

Description：MOSFET N-CH 1000V 7.3A TO247-3
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube

SKU:a3a074b621f1 Category: Single FETs, MOSFETs Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

STW8NB100 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 1000V 7.3A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STW8NB100

Description：MOSFET N-CH 1000V 7.3A TO247-3
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.45Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：190W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for STW8NB100

STW8NB100

Single FETs, MOSFETs Overview

The STW8NB100 is an N-channel Power MOSFET utilizing the PowerMesh™ technology, designed for high-voltage applications. It features a Drain-Source Voltage (VDS) of 1000 V and a typical on-resistance (RDS(on)) of 1.3 Ω at VGS = 10 V. The device supports a continuous drain current of 7.3 A at 25°C case temperature and handles pulsed currents up to 29.2 A. Packaged in TO-247, it offers a total dissipation of 190 W with a maximum junction temperature of 150 °C.

Single FETs, MOSFETs Feature Summary

PowerMesh™ technology provides low RDS(on) per area and exceptional avalanche capability.
Extremely high dv/dt capability ensures robust performance during fast switching events.
Minimized gate charge and very low intrinsic capacitances optimize switching characteristics.

Single FETs, MOSFETs Applications

Switch Mode Power Supplies (SMPS)
DC-AC converters for welding equipment
Uninterruptible Power Supplies (UPS)
Motor drive systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm package integrity and pin alignment against TO-247 mechanical specifications before integration. Review datasheet electrical limits carefully as operating conditions differ from standard commercial variants. Ensure thermal management aligns with specified junction-to-case resistance values.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage designs requiring efficient switching with minimal gate drive power. Consider the 1000 V rating for industrial or high-power supply topologies. Evaluate thermal constraints based on the 1.52 W/°C derating factor. Compare gate charge requirements against driver capabilities to ensure optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to STMicroelectronics' advanced PowerMesh™ family, leveraging MESH OVERLAY™ process technology. It represents a specialized discrete power semiconductor solution aimed at reducing losses in high-frequency power conversion circuits while maintaining high voltage blocking capabilities.