SUD35N10-26P-T4GE3

$0.75

Description：MOSFET N-CH 100V 35A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:bb1912d34a1d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SUD35N10-26P-T4GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 35A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUD35N10-26P-T4GE3

Description：MOSFET N-CH 100V 35A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
Rds On (Max) @ Id, Vgs：26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：8.3W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SUD35N10-26P-T4GE3

SUD35N10-26P-T4GE3

Single FETs, MOSFETs Overview

The SUD35N10-26P-T4GE3 is an N-channel MOSFET from Vishay Siliconix utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and a maximum continuous drain current of 35 A at TC = 25 °C. The device exhibits a typical on-state resistance of 0.026 Ω at VGS = 10 V and 0.0375 Ω at VGS = 7 V. Total gate charge is typically 31 nC. It operates within a junction temperature range of -55 to +175 °C and includes 100% UIS testing.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
100% Unclamped Inductive Switching (UIS) tested
Drain connected to tab for thermal management

Single FETs, MOSFETs Applications

Primary side switch

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T4' against official documentation, as standard listings reference the '-E3' lead-free designation. Confirm package type matches TO-252 requirements. Ensure sourcing channels provide original manufacturer data sheets for technical validation prior to integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust inductive switching capabilities due to verified UIS testing. Evaluate thermal performance using the specified junction-to-case resistance ratings. Validate gate drive requirements against the typical gate charge specifications to ensure efficient switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SUD series of N-channel MOSFETs. These devices are designed for general-purpose power switching applications. The TO-252 package provides a balance between current handling capability and surface mount convenience.