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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 8A TO252-4
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：37mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：640pF @ 20V
- Power - Max：10.8W, 24W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Supplier Device Package：TO-252-4
- Grade：-
- Qualification：-
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Overview
The SUD50NP04-77P-T4E3 is a complementary N- and P-channel MOSFET pair from Vishay Siliconix, rated at 40V drain-source voltage. The N-channel device features a typical on-resistance of 37mΩ at VGS=10V with an 8A continuous current rating. The P-channel counterpart offers 46mΩ at VGS=-4.5V and -50mΩ at VGS=-10V, also supporting 8A. Packaged in a TO-252-4L (DPAK) surface-mount case, the unit integrates both channels for efficient power switching. It utilizes TrenchFET technology and is verified to be 100% UIS tested for ruggedness.
Feature Summary
- Complementary dual-channel configuration integrating N- and P-MOSFETs in a single package
- TrenchFET power MOSFET technology for optimized performance
- 100% Unclamped Inductive Switching (UIS) tested for reliability
Applications
- Synchronous rectification circuits
- Low-side and high-side power switching applications
- DC-DC converter output stages
Procurement Notes
Verify the specific suffix 'T4E3' against official datasheets to confirm tape-and-reel packaging and lead-free compliance. Ensure the part number matches the complementary pair specification rather than individual discrete components. Cross-reference the manufacturer's latest documentation to confirm active status and RoHS/REACH regulatory alignment before procurement.
Selection Notes
Select this component when space-constrained designs require matched N- and P-channel characteristics within a single DPAK footprint. The 40V rating suits low-voltage DC systems. Verify that the 8A current capability meets load requirements and that the thermal resistance of the TO-252-4L package aligns with the system's heat dissipation strategy.
Part Context
This part belongs to the SUD series of complementary MOSFETs from Vishay Siliconix. It consolidates two discrete devices into one assembly, reducing board space and parasitic inductance compared to separate components. The TO-252-4L package provides four terminals, typically connecting drains together or providing separate access depending on the internal schematic.
Replacement Considerations
Direct replacements include the SUD50NP04-77P variant if packaging differences are acceptable. Other complementary 40V DPAK pairs from Vishay or competitors with similar Rds(on) and Id ratings may serve as functional substitutes if pinout compatibility is verified.
