SVD5865NLT4G

Single FETs, MOSFETs Overview

The SVD5865NLT4G is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a DPAK-3 (TO-252-3) surface-mount package. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 17 A. Its maximum gate-source voltage rating is ±20 V, with a threshold voltage of 2.5 V. The component exhibits a typical on-resistance of 66 mΩ at specified conditions and a total gate charge of 14 nC. It operates within a temperature range of -55°C to +175°C junction temperature and has a power dissipation rating of 49 W.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for efficient switching applications
• Low on-resistance characteristic optimized for conduction loss reduction
• Robust thermal performance supporting high junction temperatures up to 175°C
• Surface-mount DPAK-3 packaging suitable for automated assembly processes

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring low-side switching
• Power management modules for automotive electronics
• General-purpose load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T4G' against the official onsemi datasheet to confirm tape-and-reel packaging and RoHS compliance status. Ensure the part number matches the exact electrical specifications required for your design, as minor suffix variations may indicate different packaging or material compositions. Cross-reference with the manufacturer's latest obsolescence notices to confirm availability and lifecycle status before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with moderate current handling capabilities is required in a compact surface-mount form factor. The 66 mΩ on-resistance offers a balance between conduction losses and cost for general-purpose power switching. Consider the 17 A continuous current rating relative to your thermal management strategy, as the DPAK-3 package requires adequate PCB copper area to dissipate the 49 W power rating effectively under operating conditions.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's discrete semiconductor transistor portfolio, specifically within the MOSFET category. It represents a standard silicon-based solution designed for robust performance in various power management environments. The product line emphasizes reliability and efficiency for industrial and automotive applications where space-constrained surface-mount solutions are preferred over through-hole alternatives.

Single FETs, MOSFETs Replacement Considerations

Consult the official onsemi documentation for verified substitute part numbers. Direct replacements must match the 60 V, 17 A, DPAK-3 specification profile. Verify pinout compatibility and electrical parameter equivalence before integrating any alternative components into the design.