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SVD5867NLT4G-UM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SINGLE N-CHANNEL POWER MOSFET 60. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SVD5867NLT4G-UM
- Description：SINGLE N-CHANNEL POWER MOSFET 60
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：39mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：675 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.3W (Ta), 43W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for SVD5867NLT4G-UM
Single FETs, MOSFETs Overview
The onsemi SVD5867NLT4G-UM is an N-channel enhancement mode Power MOSFET designed for surface-mount applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 22 A. The device exhibits a maximum drain-source on-resistance (Rds(on)) of 39 mΩ at a gate-source voltage (Vgs) of 10 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a TO-252 (DPAK) package.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability compliant with AEC-Q101 standards
- Low on-resistance for efficient power switching
- High thermal stability with extended operating temperature range
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- DC-DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'UM' against official datasheets to confirm exact tape-and-reel specifications or marking variations. Ensure compatibility with automotive qualification requirements if used in vehicle electronics. Cross-reference pinout and thermal pad dimensions with PCB layout guidelines to prevent installation errors.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V N-channel MOSFET with automotive qualification is required. The 22 A current rating and 39 mΩ Rds(on) make it suitable for moderate-power switching tasks. Consider the DPAK package constraints for thermal management and board space availability compared to larger packages.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's automotive-grade Power MOSFET portfolio, specifically the SVD series. These devices are engineered for robust performance in harsh automotive environments. The SVD5867NL variant serves as the base model, with the SVD5867NLT4G-UM representing the specific tape-and-reel packaging configuration for automated assembly.
Single FETs, MOSFETs Replacement Considerations
Direct replacements must match the 60 V, 22 A, 39 mΩ specifications and DPAK footprint. Verify that alternative parts also hold AEC-Q101 certification if automotive use is intended. Check gate charge and threshold voltage compatibility with existing driver circuits.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
