T2G6001528-Q3

Overview

The T2G6001528-Q3 is a wideband unmatched discrete GaN on SiC HEMT from Qorvo, operating from DC to 6.0 GHz with a 28V supply rail. It delivers an output power of 15 W (P3dB) and typically provides greater than 10 dB gain at 6 GHz. The device supports both continuous wave and pulse mode operations, making it suitable for high-frequency applications requiring broad bandwidth and high efficiency.

Feature Summary

• Wideband operation spanning DC to 6.0 GHz
• High output power capability of 15 W at P3dB
• Unmatched discrete GaN on SiC HEMT construction

Applications

• Broadband power amplifier designs
• Military communication systems
• Wireless infrastructure equipment

Procurement Notes

Verify the specific datasheet version and ordering suffixes to ensure compatibility with your design requirements. Confirm that the 28V supply rail and DC-to-6GHz frequency range align with your system specifications before procurement.

Selection Notes

Select this component for applications requiring wideband performance up to 6 GHz. Consider its unmatched nature when designing matching networks. Evaluate thermal management needs due to high power density in GaN on SiC technology.

Part Context

This part belongs to Qorvo's TQGaN series of GaN on SiC HEMTs. It is designed for high-efficiency, high-power RF applications. The device leverages proven GaN technology for superior performance compared to older semiconductor materials like GaAs or LDMOS.

Replacement Considerations

The T2G6000528-Q3 is a related variant offering 10 W output power. Ensure voltage ratings and frequency ranges match your application needs when considering substitutes.