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T4M10T600B
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Product Detailed Parameters
- Description：THYRISTOR TO220AB TUBE 50PCS
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- Voltage - Off State：-
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：-
- Current - Hold (Ih) (Max)：-
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- SCR Type：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：-
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Overview
The T4M10T600B is a silicon bidirectional thyristor (triac) manufactured by Diodes Incorporated. It features a 600V peak repetitive off-state voltage and an on-state RMS current rating of 4A at +100°C case temperature. The device supports a peak non-repetitive surge current of 40A and operates within a junction temperature range of -40°C to +125°C. Packaged in a TO-220AB housing, it offers sensitive gate triggering with specified minimum and maximum values for IGT, VGT, and IH. The component provides high immunity to dv/dt, rated at a minimum of 50V/µs at +125°C, and is compliant with RoHS directives.
Feature Summary
- Sensitive gate design enables reliable triggering by microcontrollers and logic circuits
- High dv/dt immunity ensures stable operation under rapid voltage changes
- Operational across three quadrants (Q1, Q2, and Q3) for versatile control applications
Applications
- Lighting control systems requiring phase-angle firing
- Solid-state relays for AC load switching
- Motor speed control circuits for small appliances
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the procurement channel is authorized to guarantee product authenticity and adherence to standard terms of sale. Check for compliance with relevant environmental directives such as RoHS and REACH requirements applicable to your region before finalizing orders.
Selection Notes
Select this component when a 4A RMS current rating at elevated temperatures is required alongside a 600V blocking capability. Ensure the application circuit can handle the specified 40A surge current during turn-on transients. Verify that the gate drive circuitry aligns with the specified trigger voltage and current limits to maintain consistent performance across the operating temperature range.
Part Context
This triac belongs to the T4M series of silicon bidirectional thyristors from Diodes Incorporated. The series is characterized by rugged construction and economical pricing for general-purpose AC switching. The TO-220AB package facilitates through-hole mounting and heat dissipation suitable for moderate power applications.
Replacement Considerations
Consult the manufacturer's datasheet for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute part matches the critical dv/dt rating and gate trigger specifications to ensure circuit stability without redesign.
