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Product Detailed Parameters
- Description：SMT LNA, 10 MHZ - 4 GHZ
- Series：-
- Mfr：Mini-Circuits
- Package：Tape & Reel (TR)
- Technology：D-pHEMT
- Frequency：10MHz ~ 4GHz
- Gain：12.3dB
- Voltage - Test：4 V
- Current Rating (Amps)：228mA
- Noise Figure：1dB
- Current - Test：60 mA
- Power - Output：-
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：TE2769
- Configuration：-
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Overview
The TAV1-331NM+ is a surface-mount RF MOSFET transistor manufactured by Mini-Circuits, designed for low noise amplifier applications. It operates within a frequency range of 10 MHz to 4 GHz and utilizes GaAs technology with an N-channel configuration. The device features a maximum drain-source breakdown voltage (Vds) of 4 V and a continuous drain current (Id) of 60 mA. Key electrical parameters include a typical noise figure of 12.3 dB and a saturated output power of 21.5 dBm. It is housed in a compact SMT package suitable for board mounting.
Feature Summary
- Designed specifically for low noise amplifier implementations
- Utilizes Gallium Arsenide (GaAs) technology for RF performance
- Surface mount construction for automated board assembly
Applications
- Low noise amplifier circuits
- RF signal processing stages
- Wireless communication systems
Procurement Notes
Verify the specific suffix 'NM+' against the official Mini-Circuits datasheet to confirm pinout and packaging details. Ensure compatibility with the intended operating voltage of 4 V and current requirements of 60 mA. Cross-reference the 10 MHz to 4 GHz frequency range with system specifications. Confirm RoHS compliance status through the manufacturer's documentation before integration.
Selection Notes
Select this component when designing amplifiers requiring operation up to 4 GHz with moderate gain characteristics. The 4 V supply requirement suits low-power applications. Verify that the 12.3 dB noise figure meets system sensitivity targets. Consider the SMT package size for PCB layout constraints compared to larger discrete transistors.
Part Context
This component belongs to the Mini-Circuits TAV1 series of RF MOSFETs. These devices are engineered for high-efficiency amplifier and oscillator applications across various microwave frequencies. The series emphasizes compact form factors and reliable performance in consumer and industrial RF environments.
Replacement Considerations
Consult Mini-Circuits official substitution guides for direct equivalents. No public substitute part numbers are confirmed in available documentation.
